UNISONIC TECHNOLOGIES CO., LTD
12N50
12A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
12N50
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC
12N50
is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* R
DS(ON)
<0.54Ω @ V
GS
=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
12N50L-TA3-T
12N50G-TA3-T
12N50L-TF3-T
12N50G-TF3-T
12N50L-TF1-T
12N50G-TF1-T
12N50L-TF2-T
12N50G-TF2-T
12N50L-TQ2-T
12N50G-TQ2-T
12N50L-TQ2-R
12N50G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
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1 of 6
QW-R502-528.F
12N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±30
V
I
D
12 (Note 2)
A
Continuous (T
C
=25°C)
Drain Current
Pulsed (Note 3)
I
DM
48 (Note 2)
A
Avalanche Current (Note 3)
I
AR
12
A
Single Pulsed (Note 4)
E
AS
684
mJ
Avalanche Energy
Repetitive (Note 5)
E
AR
19.5
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
TO-220/ TO-263
195
Power Dissipation
W
TO-220F/TO-220F1
42
(T
C
=25°C)
TO-220F2
43
P
D
TO-220/TO-263
1.53
Derate above 25°C
TO-220F/TO-220F1
0.33
W/°C
TO-220F2
0.34
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =9.5mH, I
AS
= 12A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
5. I
SD
≤
12A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.65
3.0
2.9
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220/ TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2
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2 of 6
QW-R502-528.F
12N50
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=400V, I
D
=12A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=250V, I
D
=12A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=12A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500
V
10
µA
+100 nA
-100 nA
4.0
0.42 0.54
1450 1930
198 265
14.5 22
30
8
12
28
54
75
47
39
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
2.0
65
120
160
105
12
48
1.5
154
0.45
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3 of 6
QW-R502-528.F
12N50
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
V
GS
Q
G
Power MOSFET
Gate Charge Waveforms
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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4 of 6
QW-R502-528.F
12N50
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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5 of 6
QW-R502-528.F
传感器
