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1416-250M

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, 55ST-1, 2 PIN

器件类别:分立半导体    晶体管   

厂商名称:ADPOW

厂商官网:http://www.advancedpower.com/

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器件参数
参数名称
属性值
包装说明
FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code
unknown
Is Samacsys
N
外壳连接
BASE
最大集电极电流 (IC)
15 A
配置
SINGLE
最高频带
L BAND
JESD-30 代码
R-CDFM-F2
元件数量
1
端子数量
2
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
1416-250M R1
1416-250M
250 Watts, 42 Volts, 200µs, 10%
Radar 1460 to 1660 MHz
GENERAL DESCRIPTION
The 1416-250M is an internally matched, COMMON BASE transistor capable
of providing 250 Watts of pulsed RF output power at 200 microseconds pulse
width, 10% duty factor across the band 1460 to 1660 MHz. This hermetically
solder-sealed transistor is specifically designed for upper L-Band radar
applications. It utilizes gold metallization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55ST-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
Collector Current (I
c
)
795 W
70 V
3.5 V
15 A
Maximum Temperatures
Storage Temperature
-65 to +200
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
g
η
c
R
L
Pd
VSWR
1
CHARACTERISTICS
Power Output
Power Gain
Collector Efficiency
Return Loss
Pulse Droop
Load Mismatch Tolerance
TEST CONDITIONS
F = 1460-1660 MHz
Vcc = 42 Volts
Pin = 50 W
Pulse Width = 200µs
Duty Factor = 10%
F=1460 MHz, Pin = 50W
MIN
250
7.0
38
-9
0.5
3.0:1
TYP
270
MAX
315
8.0
UNITS
W
dB
%
dB
dB
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
BV
ces
h
FE
θjc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
I
e
= 50 mA
I
c
= 100 mA
V
ce
= 5V, I
c
= 1A
3.0
65
20
V
V
55
0.22
°C/W
NOTES: 1. Pulse condition of 200µsec, 10%
Issue April 2005
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1416-250M R1
1416-250M
Performance Curves –
Power Gain and Efficiency vs Frequency
Vcc = 42 V, Pout = 250W, 200 us, 10%
12
Power Gain
10
8
6
4
2
0
1460
1510
1560
1610
1660
Frequency MHz
Pgain
Efficiency
1460 MHz
Power Output vs Power Input
Vcc=42V, 200us, 10%
50
Efficiency %
40
30
20
10
0
300
275
250
225
200
175
150
125
100
75
50
25
0
0
10
20
30
40
50
60
70
Pout (W)
Pin (W)
1560 MHz
1660 MHz
Typical Impedances
Series Sopurce Impedance vs Frequency
Vcc = 42 Volts, Pout = 250W, 200 us, 10%
2.50
Rin ( Ohms)
2.00
1.50
1.00
0.50
0.00
1410 1460 1510 1560 1610 1660
Frequency
Rin
jXin
-0.70
jXin ( Ohms)
-1.20
-1.70
-2.20
-2.70
-3.20
Rcl ( Ohms)
Series Load Impedance Vs Frequency
Vcc= 42Volts, Pout = 250W, 200 us, 10%
1.00
0.80
0.60
0.40
0.20
0.00
1460
1510
1560
1610
1660
Frequency
Rl
JXl
-1.00
jXcl ( Ohms)
-1.40
-1.80
-2.20
-2.60
-3.00
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1416-250M R1
1416-250M
BROADBAND TEST Circuit
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1416-250M R1
1416-250M
Case Outline
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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参数对比
与1416-250M相近的元器件有:。描述及对比如下:
型号 1416-250M
描述 RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, 55ST-1, 2 PIN
包装说明 FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknown
Is Samacsys N
外壳连接 BASE
最大集电极电流 (IC) 15 A
配置 SINGLE
最高频带 L BAND
JESD-30 代码 R-CDFM-F2
元件数量 1
端子数量 2
封装主体材料 CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR
封装形式 FLANGE MOUNT
极性/信道类型 NPN
认证状态 Not Qualified
表面贴装 YES
端子形式 FLAT
端子位置 DUAL
晶体管元件材料 SILICON
Base Number Matches 1
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