1N4001 thru 1N4007
Vishay Semiconductors
General Purpose Plastic Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
j
max.
1.0 A
50 V to 1000 V
30 A
1.1 V
5.0
μA
150 °C
DO-204AL (DO-41)
Features
•
•
•
•
Low forward voltage drop
Low leakage current
High forward surge capability
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AL, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated (E3 Suffix) leads,
solderable per J-STD-002B and JESD22-B102D
Polarity:
Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(T
A
= 25
°C
unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 75 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length T
L
= 75 °C
Operating junction and storage temperature
range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
1N4001
50
35
50
1N4002
100
70
100
1N4003 1N4004 1N4005 1N4006 1N4007 Unit
200
140
200
400
280
400
1.0
30
30
- 50 to + 150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
µA
°C
Document Number 88503
25-Aug-05
www.vishay.com
1
1N4001 thru 1N4007
Vishay Semiconductors
Electrical Characteristics
(T
A
= 25
°C
unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage
Test condition
at 1.0 A
Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
V
F
I
R
C
J
1.1
5.0
50
15
Unit
V
µA
pF
Maximum DC reverse current at T
A
= 25 °C
rated DC blocking voltage
T
A
= 125 °C
Typical junction capacitance
at 4.0 V, 1 MHz
Thermal Characteristics
(T
A
= 25
°C
unless otherwise noted)
Parameter
Typical thermal resistance(1)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Symbol
R
θJA
R
θJL
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
50
25
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
Average Forward Rectified Current (A)
1.0
30
0.8
0.2 x 0.2” (5.0 x 5.0 mm)
Copper Pads
0.6
Peak Forward Surge Current (A)
60 Hz Resistive or
Inductive Load
T
A
= 75 °C
8.3
ms Single Half Sine-Wave
25
20
0.4
15
0.2
0.375” (9.5 mm)
Lead Length
0
25
50
75
100
125
150
175
10
0
5.0
1
10
100
Junction Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
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Document Number 88503
25-Aug-05
1N4001 thru 1N4007
Vishay Semiconductors
20
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
10
1
T
J
= 25 °C
Pulse
Width
= 300µs
1 % Duty Cycle
Junction Capacitance (pF)
1.6
1.8
10
0.1
0.01
0.6
1
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
T
J
= 150 °C
100
100
Transient Thermal Impedance (°C/W)
60
80
100
Instantaneous Reverse Current (
∝
A)
10
10
T
J
= 100 °C
1
T
J
= 25 °C
0.1
1
0.01
0
20
40
0.1
0.01
0.1
1
10
100
Percentage of Peak Reverse
Voltage
(%)
t-Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
for suffix “E” part numbers
0.023 (0.58)
Document Number 88503
25-Aug-05
www.vishay.com
3
嵌入式系统
