23A003
0.3 Watts, 15 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION
The23A003 is a COMMON EMITTER transistor capable of providing 0.3
Watts of Class A, RF output power to 2300 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55BT, STYLE 2
B08
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
3.0 Watts
50 Volts
3.5 Volts
0.3 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
Ft
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
TEST CONDITIONS
F = 2.3 GHz
Ic = 100 mA
Vcc = 15 Volts
Vce = 15V, Ic =100 mA
MIN
0.3
0.03
10.0
4.2
11.0
4.5
10:1
TYP
MAX
UNITS
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
h
FE
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 2 mA
Ic = 20 mA
Ic = 20 mA
Vce = 5 V, Ic = 100 mA
Vcb = 20V, f = 1 MHz
3.5
50
20
20
2.5
45
Volts
Volts
Volts
pF
C/W
o
Initial Issue November 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
NXP MCU