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2729-125

RF Bipolar Transistors S-Band/Bipolar Radar Transistor

器件类别:分立半导体    晶体管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件:2729-125

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Microsemi
包装说明
HERMETIC SEALED, 55KS-1, 2 PIN
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
外壳连接
BASE
最大集电极电流 (IC)
15 A
配置
SINGLE
最高频带
S BAND
JESD-30 代码
R-CDFM-F2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
200 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
2729-125
125 Watts, 36 Volts, 100µs, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-125 is an internally matched, COMMON BASE bipolar transistor
capable of providing 125 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band.
The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull.
This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
350
Device Dissipation @ 25°C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
65
Emitter to Base Voltage (BV
ebo
)
3.0
Collector Current (I
c
)
15
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
W
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
in
P
g
η
c
VSWR
CHARACTERISTICS
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
1
TEST CONDITIONS
F=2700-2900 MHz
V
cc
= 36 Volts
Pulse Width = 100 µs
Duty Factor = 10%
F = 2900 MHz, P
o
= 125W
Ie = 30 mA
Ic = 120 mA
Vce = 5V, Ic = 600 mA
MIN
125
15.7
9.0
45
9.5
55
2:1
TYP
MAX
UNITS
W
W
dB
%
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
BV
ces
h
FE
θjc
1
NOTE:
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
1. At rated output power and pulse conditions
3.0
56
18
65
50
0.5
V
V
°C/W
Issue April 2003
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
2729-125
Vcc = 36 Volts, Pulse Width = 100µs, Duty = 10%
G2747-2, Unit 7, TF040803P2
Gain vs. Power Input -dBm
36 Volts, 100µs, 10%
150.0
12.0
11.0
10.0
140.0
130.0
120.0
110.0
100.0
Pout (W)
2.7
2.8
2.9
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
37.0
38.0
39.0
40.0
41.0
42.0
0.0
4.0
Power Output vs. Power In (Watts)
36Volts, 100µs, 10%
Power Gain (dB)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
36.0
2.7
2.8
2.9
Expected Pout
6.0
8.0
10.0
Pin (W)
12.0
14.0
16.0
Power Input (dBm)
Gain vs. Power Input -dBm
36 Volts, 100µs, 10%
70.0
12.0
11.0
10.0
9.0
Efficiency (%) vs Power Input (W)
36 Volts, 100µs,
10%
60.0
50.0
2.7
Power Gain (dB)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
EFF(%)
40.0
2.7
2.8
2.9
2.8
2.9
30.0
20.0
10.0
0.0
4.0
6.0
8.0
10.0
Pin (W)
12.0
14.0
16.0
Power Input (dBm)
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
2729-125
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
2729-125
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
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