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2C2907AHV

Si, PNP, RF SMALL SIGNAL TRANSISTOR, 0.022 X 0.022 INCH, 0.011 INCH HEIGHT, DIE-3

器件类别:分立半导体    晶体管   

厂商名称:Motorola ( NXP )

厂商官网:https://www.nxp.com

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器件参数
参数名称
属性值
零件包装代码
DIE
包装说明
UNCASED CHIP, S-XXUC-N3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
0.6 A
基于收集器的最大容量
8 pF
集电极-发射极最大电压
60 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
S-XXUC-N3
元件数量
1
端子数量
3
最高工作温度
200 °C
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
UNCASED CHIP
极性/信道类型
PNP
最大功率耗散 (Abs)
0.4 W
认证状态
Not Qualified
表面贴装
YES
端子形式
NO LEAD
端子位置
UNSPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
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MOTOROW
SEMICONDUCTOR
TECHNICALDATA
@
Order this
dooument
by
2C2W7AHVID
2C2907AHV Chip
PNP Silicon
Smal14ignal Transistor
. . designed for dc to VHF amplifier and generaburpose
witching
applications.
.11
~+
“~
[
Technaloglw )muon
Opl
MMIMUM
RATINGS
Rating
symbol
VCEO
VCBO
VEBO
Ic
Value
60 ~ {,
‘,:-,$<
!.,..!T,,$
.
,,>,. ,~ili$\\i
~
~,
?~i..,:i,
..,>,.
.,,;~~:>- ,
Unit
“:} “‘
Vdo
Vdo
Vdo
mAdo
mW
Colleotor-Em.wr Vobge
Oolleotor+aee Vobge
Emitter=ase Vohge
Colleotor Current
6#~~\ “’’’””
$$$~.$.o “~
{’,*$
+~’”$ itio
‘.$,,
“’”
f,~.. 400
“’’’s’:””
,+\:::..?*
.$!,+,,
2.28
PowerDissiWtion@ TA = 25°C
Dsrate above 25°C
PD
TNW,Q
,s
mW/OC
“c
StorageandJuMon Temperature
Range
“$‘
-85 to +200
‘,. , :$,)..,,
.
,,,,..
.,.., .
ELECTRICAL CHARACTERISTICS ~A = ~sri~jfif~
Chamotedtic
OFF CHARAOTERISTIM
(1C= 10 mAdo)
Collaor+aae
Breakdown
(1C= 10 @*)
,,~’”
Emtier+ese Bre@@wge
(1C= 10 @&)*,$~<,3
Colleotor
C~:*ifit
~CB = %;~)s
~CQ..%@*.
TA = 150”C~
V(BR)CBO
V(BR)EBO
otha~.se tiw.)
I
Min
M=
Unit
#~~$k#rnb~l
-.,<.:~,t...
.:,.,
~.i
,ti,\\?~:6,
%$/,t,.. .
.,,.
\.t
Physical
Characteristics:
Die Size -
22x 22
rolls
Die Thickness —
>11 roils
Bond Pad Sire.
Emitter— 4.45 sq.
Base — 4.4 sq.
Back Metal
20 ~
Gold
(Nom)
Top Metal
15 ~ Alum. (Nom)
Back Side = Colleotor
I
Colleotor-EmMer reakdownVol*’~&${}:$
B
V(BR)CEO
80
60
5.0
v&
Vdc
v&
ICBO
iE~
10
10
50
mdo
@do
nA&
(mntinued)
O
to MO W, D@ Cycle 1.0to
2.0%.
r
RW
O
9/93
MO=ROLA
@
@
Motorola,Im. 19W
2C2907AHV
ELECTRICALCHARACTERISTl~ —
contlnud
Chara*rfattc
~A = 25°C
unlessothetise noted.)
I
s~bl
Mln
I
MU
Unit
ON CHAWCTERISTICS
DC
Current
Gain
(1c= 0.1 mAdo,VCE = 10 Vdoy
(1c= 1.0 mAdo,VCE = 10Vdoy
(tc=lo~&,vcE=lovdO~
(ic =
150 mAdo,VCE = 10 Vdo~
(ic =
500 ti~,
VCE = 10
Vdo)
(Ic = 1.0 MA*,
VCE = 10 V&, TA =
+5”C~
hFE
75
100
100
100
50
50
Colleotor-EmitterSaturationVo@e*
([C = 150 tik,
I,B= 15 tidO)
(ic = 500 tidO, ]B = 50 tidO)
Emtier-Baee SatumtionVobge*
(IC= 150 tidO,
(IC =
500 ~k,
iB= 15 ~&)
vcE(~~)
_
VBE(sat)
IB = 50 ~dO)
+!r~
.::)*,..:,,
he
f=l.O~Z)
Ihfel
I,@* “$’,
<~>+
,.+y,.l+,
w$~,,,.
....,
,, f;d:,y
“ ,jt..;t’~’
SMALL41GNAL CHARACTERISTICS
SmalHgnal CurrentGain*
(ic=l.Oti,
vcE=lOv&,
SmalMgti CumentTransferRatio,MagnWe
(1c.50 rnAdo,VCE= 20 Vw, f = 100MHz)
output spao.bnoe.
C
~CB=10V*, IE
=0, f= 100WZ-1.O MHz)
InputCaps-”
~BE = 2.0 V&, Ic = O,f =
100 kHz - 1.0
MHz)
Co%$
‘*a. —
8.0
30
Ji>l\.:.\
~ ‘.lf,:?k
,a?~:y~
.,) ? ,
,’*?,
T
SWITCHINGCHARACTERISTICS*ic = 150 mAdo,IB = 15 MAW) k “+
(
.,4?, .
,?}
P<.:fii
Tutin
~me
bn
Tuti
Time
‘~,. .+7$.
$.
.,>..,.,.
\,.
.?.,...
.: ,,{,...
&
300
bff
a
I
pF
pF
ns
ns
Unit
nAdc
initial and
End Point
Llmlts
Cha*detl~
ColieotorCutoffCurrent
NCB = ~ Vdo)
Tested
,...!?
~y >,
~i.t.~,
“,,~:!
.i.i:,~:;.
\,~<.’
..R:J,$$. i
k:, ,t$$
,$*:, .~$.c..
~,
~ .+*
!},iei
ICBO
10
300
DC
CurrentGain*
(]c = 150 tide, VCE ~$~Vd~”
>J. t::,,tfr
.,
1~,,.,,1 ..
).., .
\
Delta
from P#Wn
Measured Valuea
Deh ColltioF@&’6uwent
.Z,r,. ~,,,,
~
*>, ~$‘*
,;*\i>$. .,..:>
“i;,!..
~i...l.,.
D*
~@I~&ment
Gaing
hFE
100
Min
AIcBO
Mm
*100
or*15
whichever is greater
%.0
YO
of Initial Value
nAdc
% of
Intial
Value
AhFE
* PulS@.’?~ulseWdth 250 to 350 W, D@ Qcle 1.0 to 2.OYO.
.,$
COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA
-
MOTOROM
2C2907AHV
,$,”
.
, $b,,$$~’
.,,,.,
,.i’-~
~,.,
MWmlarmw~~@*to&ec
~guWWfutihwnti~to
anypmductsharein. Motorola makeenowarranty, repreaentatlon orguararrtea regarding
the su.tifity of-@_
for any particular puw,
nor dose Motorola assume any tiabi~~ ~.sing out of the @@on
or use of any product or cimufi,
andapecifi~yeany
and dl titifity, including wthouf Iim-titiorr Wnsequentid oritida~
damages. ~~~
parameters can and do very in different
W@l@~@ -W
_terS,
l~Udin9 Tmds
must be Wkfated for each customer -ion
by matomer’s technid expe~. Motoroladoas
not convqy an%l~nee under its patent tights nor the rights of othem. Motorola products are not designed, inteti,
or authorized for use as components in
SYS=-
for surg~ impfarrtinto the ~,
or other ap~cstiona inteti
to support or sustain life, or for any other app~ition in which the failure of
tha’~,b
product could create a situation Wre personal Injury or death may -r.
Should Buyer purchase or use Motorola products for any such
,,~l*orunauthorfzed
@cation, Buyershdl Indemnify and hdd Motorola end ifs offfwra, employees, subsidies, afilletea, anddi~butors harmless
%W
all ol~~I ~P
*a9~,
~ ~~1
@ r~@e
~~ey
f-
mi~
M of, drmly w IndirectV, any claim of persona injury or death
satedwh
uch unlnttiorunauthotied
use, even if such ddm dI~eethat Motomlawae negligent reg~ngthe
design ormanufactureof the~
MMorola and @ era regleterad trademarks of Motorola, Im. Motorola, Inc. 19an EqW O~rtunlty/Atimsflve
Action Em@oyer.
Lfterstura DiatrfbWon tintem
USA Motorola Literature Distrfbutfom P.O. Box 2~12; Phoenix, Arizona m.
EUROPE Motorola Ltd.; European Ltierature Oentr~ SSTanners Drive, Blakdarrrfs, Milton Kaynes, MK14 58P, England.
JAPAN Nippon Motorola Ltd.; M2-1, Nishffiotanda, ShlrragewW, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Siltin Harfmur Center, No. 2 Dai Kng Street Tei Po Industrial Estate, Tai Po, N.T., Hong Kong.
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M~ROLA
2C2907AHVID
1PHX24101 1-2 PRINKD
IN USA WW
MPWPOD
CPTO
YOACW
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参数对比
与2C2907AHV相近的元器件有:。描述及对比如下:
型号 2C2907AHV
描述 Si, PNP, RF SMALL SIGNAL TRANSISTOR, 0.022 X 0.022 INCH, 0.011 INCH HEIGHT, DIE-3
零件包装代码 DIE
包装说明 UNCASED CHIP, S-XXUC-N3
针数 3
Reach Compliance Code unknown
ECCN代码 EAR99
最大集电极电流 (IC) 0.6 A
基于收集器的最大容量 8 pF
集电极-发射极最大电压 60 V
配置 SINGLE
最小直流电流增益 (hFE) 100
JESD-30 代码 S-XXUC-N3
元件数量 1
端子数量 3
最高工作温度 200 °C
封装主体材料 UNSPECIFIED
封装形状 SQUARE
封装形式 UNCASED CHIP
极性/信道类型 PNP
最大功率耗散 (Abs) 0.4 W
认证状态 Not Qualified
表面贴装 YES
端子形式 NO LEAD
端子位置 UNSPECIFIED
晶体管应用 SWITCHING
晶体管元件材料 SILICON
Base Number Matches 1
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