Small Signal Bipolar Transistor, 1A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
厂商名称:Semitronics Corp
下载文档型号 | 2N2896 | 2N719A | 2N2237 |
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描述 | Small Signal Bipolar Transistor, 1A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN |
零件包装代码 | BCY | BCY | TO-5 |
包装说明 | CYLINDRICAL, O-MBCY-W3 | TO-18, 3 PIN | TO-5, 3 PIN |
针数 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow |
最大集电极电流 (IC) | 1 A | 1 A | 0.5 A |
集电极-发射极最大电压 | 90 V | 80 V | 20 V |
配置 | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 60 | 20 | 40 |
JEDEC-95代码 | TO-18 | TO-18 | TO-5 |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
最高工作温度 | 175 °C | 200 °C | 150 °C |
封装主体材料 | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | NPN | NPN | NPN |
最大功率耗散 (Abs) | 0.5 W | 0.5 W | 0.6 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO |
端子形式 | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 120 MHz | 40 MHz | 50 MHz |
Base Number Matches | 1 | 1 | 1 |
晶体管应用 | SWITCHING | - | SWITCHING |