DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2906; 2N2906A
PNP switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 02
Philips Semiconductors
Product specification
PNP switching transistors
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
High-speed switching
•
Driver applications for industrial service.
1
handbook, halfpage
2N2906; 2N2906A
PINNING
PIN
1
2
3
emitter
base
collector, connected to case
DESCRIPTION
3
2
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.
3
2
MAM263
1
Fig.1
Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
PARAMETER
collector-base voltage
collector-emitter voltage
2N2906
2N2906A
I
C
P
tot
h
FE
f
T
t
off
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
T
amb
≤
25
°C
I
C
=
−150
mA; V
CE
=
−10
V
I
C
=
−50
mA; V
CE
=
−20
V; f = 100 MHz
I
Con
=
−150
mA; I
Bon
=
−15
mA; I
Boff
= 15 mA
open emitter
open base
−
−
−
−
40
200
−
−40
−60
−600
400
120
−
300
MHz
ns
V
V
mA
mW
CONDITIONS
−
MIN.
MAX.
−60
V
UNIT
1997 Jun 02
2
Philips Semiconductors
Product specification
PNP switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
PARAMETER
collector-base voltage
collector-emitter voltage
2N2906
2N2906A
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
T
case
≤
25
°C
open collector
CONDITIONS
open emitter
open base
2N2906; 2N2906A
MIN.
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−60
−40
−60
−5
−600
−800
−200
400
1.2
+150
200
+150
V
V
V
V
UNIT
mA
mA
mA
mW
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
VALUE
438
146
UNIT
K/W
K/W
1997 Jun 02
3
Philips Semiconductors
Product specification
PNP switching transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified
SYMBOL
I
CBO
2N2906
I
CBO
collector cut-off current
2N2906A
I
EBO
h
FE
emitter cut-off current
DC current gain
2N2906
I
E
= 0; V
CB
=
−50
V
I
E
= 0; V
CB
=
−50
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−5
V
V
CE
=
−10
V
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−150
mA; note 1
I
C
=
−500
mA; note 1
h
FE
DC current gain
2N2906A
V
CE
=
−10
V
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−150
mA; note 1
I
C
=
−500
mA; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
collector-emitter saturation voltage I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−2
V; f = 1 MHz
PARAMETER
collector cut-off current
I
E
= 0; V
CB
=
−50
V
I
E
= 0; V
CB
=
−50
V; T
amb
= 150
°C
CONDITIONS
2N2906; 2N2906A
MIN.
−
−
−
−
−
20
25
35
40
20
MAX.
−20
−20
−10
−10
−50
−
−
−
120
−
UNIT
nA
µA
nA
µA
nA
40
40
40
40
40
−
−
−
120
−
−400
−1.6
−1.3
−2.6
mV
V
V
V
pF
pF
MHz
−
−
200
8
30
−
I
C
=
−50
mA; V
CE
=
−20
V; f = 100 MHz;
note 1
Switching times (between 10% and 90% levels);
see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
−150
mA; I
Bon
=
−15
mA; I
Boff
= 15 mA
−
−
−
−
−
−
45
15
35
300
250
50
ns
ns
ns
ns
ns
ns
1997 Jun 02
4
Philips Semiconductors
Product specification
PNP switching transistors
2N2906; 2N2906A
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−9.5
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
= 3.5 V; V
CC
=
−29.5
V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1997 Jun 02
5
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