型号
- 型号
- 关键词
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
厂商名称：Microsemi
厂商官网：https://www.microsemi.com
下载文档| 型号 | 2N3020 | 2N3724 | MB9BF514R | 2N3114 |
|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | This document states the current technical specifications regarding | Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 |
| 是否Rohs认证 | 不符合 | 不符合 | - | 不符合 |
| Objectid | 1689286631 | 1689287127 | - | 1689286658 |
| Reach Compliance Code | not_compliant | not_compliant | - | not_compliant |
| ECCN代码 | EAR99 | EAR99 | - | EAR99 |
| 最大集电极电流 (IC) | 1 A | 0.5 A | - | 0.2 A |
| 集电极-发射极最大电压 | 80 V | 30 V | - | 150 V |
| 配置 | SINGLE | SINGLE | - | SINGLE |
| 最小直流电流增益 (hFE) | 40 | 35 | - | 30 |
| JEDEC-95代码 | TO-39 | TO-39 | - | TO-39 |
| JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | - | O-MBCY-W3 |
| JESD-609代码 | e0 | e0 | - | e0 |
| 元件数量 | 1 | 1 | - | 1 |
| 端子数量 | 3 | 3 | - | 3 |
| 最高工作温度 | 175 °C | 175 °C | - | 200 °C |
| 封装主体材料 | METAL | METAL | - | METAL |
| 封装形状 | ROUND | ROUND | - | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | - | CYLINDRICAL |
| 极性/信道类型 | NPN | NPN | - | NPN |
| 最大功率耗散 (Abs) | 0.8 W | 1 W | - | 0.8 W |
| 认证状态 | Not Qualified | Not Qualified | - | Not Qualified |
| 表面贴装 | NO | NO | - | NO |
| 端子面层 | TIN LEAD | TIN LEAD | - | TIN LEAD |
| 端子形式 | WIRE | WIRE | - | WIRE |
| 端子位置 | BOTTOM | BOTTOM | - | BOTTOM |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON |
| 标称过渡频率 (fT) | 80 MHz | 300 MHz | - | 40 MHz |
