2N3300

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Silicon, NPN, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN

器件类别：分立半导体晶体管

厂商名称：TT Electronics plc

厂商官网：http://www.ttelectronics.com/

下载文档

器件参数

参数名称

属性值

是否Rohs认证

不符合

厂商名称

TT Electronics plc

包装说明

CYLINDRICAL, O-MBCY-W3

Reach Compliance Code

compli

ECCN代码

EAR99

最大集电极电流 (IC)

0.5 A

集电极-发射极最大电压

30 V

配置

SINGLE

JEDEC-95代码

TO-205AD

JESD-30 代码

O-MBCY-W3

元件数量

端子数量

封装主体材料

METAL

封装形状

ROUND

封装形式

CYLINDRICAL

峰值回流温度（摄氏度）

NOT SPECIFIED

极性/信道类型

NPN

认证状态

Not Qualified

表面贴装

端子形式

WIRE

端子位置

BOTTOM

处于峰值回流温度下的最长时间

NOT SPECIFIED

晶体管元件材料

SILICON

标称过渡频率 (fT)

800 MHz

文档预览

2N3300

Dimensions in mm (inches).

8.51 (0.34)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

Bipolar NPN Device in a

Hermetically sealed TO39

Metal Package.

Bipolar NPN Device.

6.10 (0.240)

6.60 (0.260)

12.70

(0.500)

min.

0.89

max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

CEO

= 30V

5.08 (0.200)

typ.

= 0.5A

2.54

(0.100)

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications

45°

TO39 (TO205AD)

PINOUTS

1 – Emitter

2 – Base

3 – Collector

Parameter

CEO

C(CONT)

Test Conditions

Min.

Typ.

Max.

0.5

Units

@ 10/10m (V

/ I

)

800M

0.8

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

1-Aug-02

参数对比

与2N3300相近的元器件有：2N3300.MODE1、2N3300E1、2N3300.MOD。描述及对比如下：

型号	2N3300	2N3300.MODE1	2N3300E1	2N3300.MOD
描述	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Silicon, NPN, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Silicon, NPN, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Silicon, NPN, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Silicon, NPN, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
是否Rohs认证	不符合	符合	符合	不符合
包装说明	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.5 A	0.5 A	0.5 A	0.5 A
集电极-发射极最大电压	30 V	30 V	30 V	30 V
配置	SINGLE	SINGLE	SINGLE	SINGLE
JEDEC-95代码	TO-205AD	TO-205AD	TO-205AD	TO-205AD
JESD-30 代码	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
元件数量	1	1	1	1
端子数量	3	3	3	3
封装主体材料	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	800 MHz	800 MHz	800 MHz	800 MHz
Base Number Matches	-	1	1	1