MMBT3904K NPN Epitaxial Silicon Transistor
MMBT3904K
NPN Epitaxial Silicon Transistor
General Purpose Transistor
3
Marking
2
1
1AK
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J,
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25°C unless otherwise noted
Parameter
Value
60
40
6
200
350
-55 ~ 150
Units
V
V
V
mA
mW
°C
Collector Power Dissipation
Operating Junction and Storage Temperature Range
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain *
Test Condition
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 30V, V
EB
= 3V
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 100mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CE
= 20V, I
C
= 10mA, f = 100MHz
I
C
= 100µA, V
CE
= 5V, R
S
= 1KΩ
f = 10Hz to 15.7KHz
V
CC
= 3V, V
BE
= 0.5V
I
C
= 10mA, I
B1
= 1mA
V
CC
= 3V, I
C
= 10mA, I
B1
= I
B2
= 1mA
Min.
60
40
6
Max.
Units
V
V
V
50
40
70
100
60
30
nA
300
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
NF
t
ON
t
OFF
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Turn On Time
Turn Off Time
0.2
0.3
0.65
0.85
0.95
4
300
5
70
250
V
V
V
V
pF
MHz
dB
ns
ns
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBT3904K Rev. B
MMBT3904K NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC current Gain
250
Figure 2. Collector-Emitter Saturation Voltage
0.3
Vce=5V
125C
hfe, Current Gain
75C
150
B=10
Vce(sat), Saturation Current,[V]
200
0.2
25C
125C
100
0.1
75C
25C
50
0.1
1
10
100
0.1
1
10
100
Collector Current, [mA]
Collector Current, [A]
Figure 3. Base-Emitter Saturation Voltage
1.0
Figure 4. Collector - Base Leakage Current
Leakage current of Collector - Base(nA)
B=10
0.9
Vbe(sat), Saturation Current,[V]
0.8
V
CB
= 30V
10
0.7
25C
0.6
75C
0.5
125C
0.4
0.3
0.1
1
1
10
100
25
50
75
100
125
150
Collector Current, [A]
Temperature, ['C]
Figure 5. Output Capacitance
10
Figure 6. Power Dissipation vs
Ambient Temperature
0.4
I
E
= 0
f = 1M Hz
P
D
- Power Dissipation (W)
1
10
100
C
ob
[pF], Capacitance
0.3
1
0.2
0.1
0.1
0.0
0
25
50
75
O
100
125
150
V
C B
[V], C ollector-B ase V oltage
Temperature, [ C]
2
MMBT3904K Rev. B
www.fairchildsemi.com
MMBT3904K NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
3
MMBT3904K Rev. B
www.fairchildsemi.com
MMBT3904K NPN Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
4
MMBT3904K Rev. B
www.fairchildsemi.com
嵌入式系统
