High-reliability discrete products
and engineering services since 1977
FEATURES
2N5114-2N5116
P-CHANNEL JFETS
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Gate drain voltage
Gate source voltage
Gate current
Storage temperature range
Operating junction temperature range
Lead temperature
(1/16” from case for 10s)
Power dissipation
Derate above 25°C
Symbol
V
GD
V
GS
I
GS
T
stg
T
J
T
L
P
D
Value
30
30
-50
-65 to +200
-55 to +200
300
500
3
Units
V
V
mA
°C
°C
°C
mW
mW/°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
2N5114
Min
Gate source breakdown voltage
I
G
= 1.0µA, V
DS
= 0
Gate source cutoff voltage
V
DS
= -15V, I
D
= -1nA
Saturation drain current
(1)
V
GS
= 0, V
DS
= -18V
V
GS
= 0, V
DS
= -15V
Gate reverse current
V
GS
= 20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0, T
A
= 150°C
Drain cutoff current
V
DS
= -15V, V
GS
= 12V
V
DS
= -15V, V
GS
= 7V
V
DS
= -15V, V
GS
= 5V
V
DS
= -15V, V
GS
= 12V, T
A
= 150°C
V
DS
= -15V, V
GS
= 7V, T
A
= 150°C
V
DS
= -15V, V
GS
= 5V, T
A
= 150°C
Drain source on-voltage
V
GS
= 0, I
D
= -15mA
V
GS
= 0, I
D
= -7mA
V
GS
= 0, I
D
= -3mA
V
DS(on)
-
-
-
-1.3
-
-
-
-
-
-
-0.8
-
-
-
-
-
-
-0.6
V
I
D(off)
-
-
-
-
-
-
-500
-
-
-1
-
-
-
-
-
-
-
-
-
-500
-
-
-1
-
-
-
-
-
-
-
-
-
-500
-
-
-1
pA
pA
pA
µA
µA
µA
I
GSS
-
-
500
1
-
-
500
1
-
-
500
1
pA
µA
I
DSS
-30
-
-90
-
-
-15
-
-60
-
-5
-
-25
mA
V
(BR)GSS
V
GS(off)
30
5
Max
-
10
2N5115
Min
30
3
Max
-
6
2N5116
Min
30
1
Max
-
4
V
V
Unit
Rev. 20150609
High-reliability discrete products
and engineering services since 1977
2N5114-2N5116
P-CHANNEL JFETS
Symbol
2N5114
Min
Max
75
-1
75
25
2N5115
Min
-
-
-
-
Max
100
-1
100
25
2N5116
Min
-
-
-
-
Max
150
-1
150
25
Ω
V
Ω
pF
Unit
r
DS(on)
V
GS(F)
r
ds(on)
C
iss
-
-
-
-
Characteristic
Drain source on resistance
V
GS
= 0, I
D
= -1mA
Gate source forward voltage
I
G
= -1mA, V
DS
= 0
Drain source on resistance
V
GS
= 0V, I
D
= 0, f = 1kHz
Common source input capacitance
V
DS
= -15V, V
GS
= 0, f = 1MHz
Common source reverse transfer capacitance
V
DS
= 0, V
GS
= 12V, f = 1MHz
V
DS
= 0, V
GS
= 7V, f = 1MHz
V
DS
= 0, V
GS
= 5V, f = 1MHz
Turn on time
C
rss
-
-
-
-
-
-
-
7
-
-
6
10
6
15
-
-
-
-
-
-
-
-
7
-
10
20
8
30
-
-
-
-
-
-
-
-
-
7
12
30
10
50
pF
t
d(on)
t
r
Turn off time
Note 1: Pulse test: PW ≤ 300µs, duty cycle ≤ 3%.
t
d(off)
t
r
ns
Rev. 20150609
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-18(DGS)
Alpha-numeric
See below
Gate is connected to case
2N5114-2N5116
P-CHANNEL JFETS
Dim
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
TO-18 (DGS)
Inches
Millimeters
Min
Max
Min
Max
0.178
0.195
4.520
4.950
0.170
0.210
4.320
5.330
0.209
0.230
5.310
5.840
0.100 TP
2.540 TP
0.016
0.021
0.410
0.530
0.500
0.750
12.700
19.050
0.016
0.019
0.410
0.480
-
0.050
-
1.270
0.250
-
6.350
-
0.100
-
2.540
-
-
0.040
-
1.020
0.028
0.048
0.710
1.220
0.036
0.046
0.910
1.170
-
0.010
-
0.025
45°TP
45°TP
Rev. 20150609
High-reliability discrete products
and engineering services since 1977
2N5114-2N5116
P-CHANNEL JFETS
Rev. 20150609
High-reliability discrete products
and engineering services since 1977
2N5114-2N5116
P-CHANNEL JFETS
Rev. 20150609
嵌入式系统
