NPN 2N5320 – 2N5321
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case .
They are especially intended for high-voltage medium power applications in industrial and commercial
equipements.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
CEV
V
EBO
I
C
I
B
P
D
Ratings
Collector-Emitter Voltage (I
B
= 0)
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= 1.5V)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
@ T
amb
= 25°
Total Power Dissipation
@ T
case
= 25°
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
Value
75
50
100
75
100
75
6
5
2
1
1
Unit
V
V
V
V
A
A
Watts
10
-65 to +200
-65 to +200
°C
°C
T
J
T
Stg
Junction Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
2N5320
2N5321
2N5320
2N5321
Value
175
17.5
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
NPN 2N5320 – 2N5321
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
V
CEO
V
CEV
V
EBO
h
FE
(1)
V
CE(SAT)
(1)
V
BE
(1)
f
T
t
on
t
off
Ratings
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown
Voltage
Collector Emitter Breakdown
Voltage
Emitter Base Breakdown
Voltage
DC Current Gain
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
Transition frequency
Turn-on Time
Turn-off Time
Test Condition(s)
V
CB
= 80 V, I
E
=0
V
CB
= 60 V, I
E
=0
V
EB
= 5 V, I
C
=0
V
EB
= 4 V, I
C
=0
I
C
= 10 mA, I
B
=0
I
C
= 100 µA
V
BE
= 1.5V
I
E
= 100 µA, I
C
=0
I
C
= 500 mA
V
CE
= 4 V
I
C
= 1 A
V
CE
= 2 V
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, V
CE
= 4 V
I
C
= 50 mA, V
CE
= 4 V
f = 10 MHz
I
C
= 500 mA, V
CC
= 30 V
I
B1
= 50 mA
I
C
= 500 mA, V
CC
= 30 V
I
B1
= -I
B2
= 50 mA
Min Typ Mx Unit
-
-
-
-
75
50
100
75
6
5
30
40
10
-
-
-
-
50
-
-
-
-
0.1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
5
-
-
-
-
-
-
-
-
130
250
-
0.5
0.8
1.1
1.4
-
80
800
V
V
MHz
ns
ns
µA
µA
V
V
V
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
-
(1) Pulse conditions : tp < 300
µs, δ
=1%
COMSET SEMICONDUCTORS
2/3
NPN 2N5320 – 2N5321
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
A
B
D
E
F
G
H
I
L
12.7
-
-
-
-
5.08
-
-
45°
typ
-
-
-
-
-
-
-
-
-
max
-
0.49
6.6
8.5
9.4
-
1.2
0.9
-
Pin 1 :
Pin 2 :
Case :
Emitter
Base
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
