2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
G
S
G
S
TO-92
D
SOT-23
Mark: 6D / 61S / 6L
D
NOTE: Source & Drain
are interchangeable
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
, T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5457-5459
625
5.0
125
357
Max
*MMBF5457-5459
350
2.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
I
G
= 10
µA,
V
DS
= 0
V
GS
= -15 V, V
DS
= 0
V
GS
= -15 V, V
DS
= 0, T
A
= 100°C
5457
V
DS
= 15 V, I
D
= 10 nA
5458
5459
V
DS
= 15 V, I
D
= 100
µA
5457
V
DS
= 15 V, I
D
= 200
µA
5458
V
DS
= 15 V, I
D
= 400
µA
5459
- 25
- 1.0
- 200
- 6.0
- 7.0
- 8.0
- 2.5
- 3.5
- 4.5
V
nA
nA
V
V
V
V
V
V
- 0.5
- 1.0
- 2.0
V
GS
Gate-Source Voltage
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= 15 V, V
GS
= 0
5457
5458
5459
1.0
2.0
4.0
3.0
6.0
9.0
5.0
9.0
16
mA
mA
mA
SMALL SIGNAL CHARACTERISTICS
g
fs
Forward Transfer Conductance*
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
5457
5458
5459
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 MHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 MHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz,
R
G
= 1.0 megohm, BW = 1.0 Hz
1000
1500
2000
10
4.5
1.5
5000
5500
6000
50
7.0
3.0
3.0
µmhos
µmhos
µmhos
µmhos
pF
pF
dB
g
os
C
iss
C
rss
NF
Output Conductance*
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
*
Pulse Test: Pulse Width
≤
300 ms, Duty Cycle
≤
2%
5
Typical Characteristics
Transfer Characteristics
Transfer Characteristics
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
Transfer Characteristics
Common Drain-Source
Parameter Interaction
Output Conductance vs.
Drain Current
Transconductance vs.
Drain Current
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Channel Resistance vs.
Temperature
Noise Voltage vs.
Frequency
Leakage Current vs. Voltage
Capacitance vs. Voltage
5
Power Dissipation vs
Ambient Temperature
P
D
- POWER DISSIPATION (mW)
700
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
TO-92
SOT-23
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
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FAST
DISCLAIMER
FASTr™
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GTO™
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QFET™
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QT Optoelectronics™
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failure to perform when properly used in accordance
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effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
