2N5782.MODE1

Power Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN

器件类别：分立半导体晶体管

厂商名称：TT Electronics plc

厂商官网：http://www.ttelectronics.com/

器件标准： Rohs认证

下载文档

器件参数

参数名称

属性值

是否Rohs认证

符合

包装说明

HERMETIC SEALED, METAL, TO-39, 3 PIN

Reach Compliance Code

compliant

ECCN代码

EAR99

最大集电极电流 (IC)

3.5 A

集电极-发射极最大电压

65 V

配置

SINGLE

最小直流电流增益 (hFE)

JEDEC-95代码

TO-205AD

JESD-30 代码

O-MBCY-W3

JESD-609代码

元件数量

端子数量

封装主体材料

METAL

封装形状

ROUND

封装形式

CYLINDRICAL

峰值回流温度（摄氏度）

NOT SPECIFIED

极性/信道类型

PNP

认证状态

Not Qualified

表面贴装

端子面层

TIN SILVER COPPER

端子形式

WIRE

端子位置

BOTTOM

处于峰值回流温度下的最长时间

NOT SPECIFIED

晶体管元件材料

SILICON

标称过渡频率 (fT)

8 MHz

Base Number Matches

文档预览

2N5782

Dimensions in mm (inches).

8.51 (0.34)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

Bipolar PNP Device in a

Hermetically sealed TO39

Metal Package.

Bipolar PNP Device.

6.10 (0.240)

6.60 (0.260)

12.70

(0.500)

min.

0.89

max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

CEO

= 65V

5.08 (0.200)

typ.

= 3.5A

2.54

(0.100)

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications

45°

TO39 (TO205AD)

PINOUTS

1 – Emitter

2 – Base

3 – Collector

Parameter

CEO

C(CONT)

Test Conditions

Min.

Typ.

Max.

3.5

Units

@ 2/1.2 (V

/ I

)

100

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

1-Aug-02

参数对比

与2N5782.MODE1相近的元器件有：2N5782.MOD、2N5782E1、2N5782。描述及对比如下：

型号	2N5782.MODE1	2N5782.MOD	2N5782E1	2N5782
描述	Power Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN	Power Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN	Power Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1-Element, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
是否Rohs认证	符合	不符合	符合	不符合
包装说明	HERMETIC SEALED, METAL, TO-39, 3 PIN	HERMETIC SEALED, METAL, TO-39, 3 PIN	HERMETIC SEALED, METAL, TO-39, 3 PIN	HERMETIC SEALED, METAL, TO-39, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
配置	SINGLE	SINGLE	SINGLE	SINGLE
JEDEC-95代码	TO-205AD	TO-205AD	TO-205AD	TO-205AD
JESD-30 代码	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
元件数量	1	1	1	1
端子数量	3	3	3	3
封装主体材料	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
ECCN代码	EAR99	EAR99	EAR99	-
最大集电极电流 (IC)	3.5 A	3.5 A	3.5 A	-
集电极-发射极最大电压	65 V	65 V	65 V	-
最小直流电流增益 (hFE)	20	20	20	-
极性/信道类型	PNP	PNP	PNP	-
标称过渡频率 (fT)	8 MHz	8 MHz	8 MHz	-