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2N5794G4

600mA, 40V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF, TO-77, 6 PIN

器件类别:分立半导体    晶体管   

厂商名称:SEMELAB

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
TO-77
包装说明
CYLINDRICAL, O-MBCY-W6
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.6 A
集电极-发射极最大电压
40 V
配置
SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)
40
JEDEC-95代码
MO-002AF
JESD-30 代码
O-MBCY-W6
JESD-609代码
e4
元件数量
2
端子数量
6
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
GOLD
端子形式
WIRE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
最大关闭时间(toff)
310 ns
最大开启时间(吨)
45 ns
Base Number Matches
1
文档预览
2N5794
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
1.02
(0.040)
Max.
12.7 (0.500)
Min.
DUAL NPN
PLANAR TRANSISTORS IN
TO77 PACKAGE
6.10 (0.240)
6.60 (0.260)
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100)
3
2
4
5
6
0.74 (0.029)
1.14 (0.045)
1
45˚
0.71 (0.028)
0.86 (0.034)
TO–77 PACKAGE (MO - 002AF)
Underside View
PIN 1 – Collector 1
PIN 2 – Base 1
PIN 3 – Emitter 1
PIN 4 – Emitter 2
PIN 5 – Base 2
PIN 6 – Collector 2
ABSOLUTE MAXIMUM RATINGS
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
STG
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Total Device Dissipation
Total Device Dissipation
Storage Temperature Range
(T
amb
= 25°C unless otherwise stated)
EACH SIDE
TOTAL DEVICE
75V
40V
6V
600mA
500mW
600mW
2.9mW / °C
3.4Wm/ °C
1.2W
2.0W
6.9mW / °C
11.43mW / °C
–65 to 200°C
T
AMB
= 25°C
Derate above 25°C
T
C
= 25°C
Derate above 25°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6068
Issue 1
2N5794
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
1
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
I
C
= 0
I
C
= 100μA
I
C
= 1mA
I
C
= 10mA
I
C
= 150mA
I
C
= 150mA
I
C
= 300mA
I
B
= 15mA
I
B
= 30mA
I
B
= 15mA
I
B
= 30mA
V
CE
= 20V
35
50
75
50
100
40
0.6
1.2
1.8
0.3
0.9
V
V
300
Min.
75
40
6
10
10
nA
nA
nA
V
Typ.
Max.
Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
I
C
= 10μA
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)CEO*
V
(BR)EBO
I
CBO
I
EBO
I
C1-C2
Collector – Emitter Breakdown Voltage I
C
= 10mA
Emitter –Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector1-2 Leakage Current
I
E
= 10μA
V
CB
= 50V
V
EB
= 4.0V
V
C1-C2
=
±
50V
V
CE
= 10V
V
CE
= 10V
h
FE*
DC Current Gain
V
CE
= 10V
V
CE
= 1.0V
V
CE
= 10V
V
CE
= 10V
V
BE(sat)*
V
CE(sat)*
Base – Emitter Saturation Voltage
Collector – Emitter saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
t
d
t
r
t
s
t
f
Transition Frequency
Collector - base Capacitance
Emitter- base Capacitance
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 30V
I
C
= 150mA
V
CC
= 30V
I
C
= 20mA
f = 100MHz
I
C
=150mA
I
C
=300mA
I
C
=150mA
I
C
=300mA
±
1.0
250
8.0
25
15
30
250
60
MHz
pF
pF
ns
ns
ns
ns
V
CB
= 10V I
E
=0 f =100kHz
V
EB
= 0.5V I
C
=0 f =100kHz
V
BE(off)
= 0.5V
I
B1
=15mA
I
C
= 150mA
I
B1
= I
B2
= 15mA
* Pulse Width
300μs , Duty Cycle
<
2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6068
Issue 1
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参数对比
与2N5794G4相近的元器件有:2N5794、2N5794-JQR-A、2N5794-JQR、2N5794-JQR-B。描述及对比如下:
型号 2N5794G4 2N5794 2N5794-JQR-A 2N5794-JQR 2N5794-JQR-B
描述 600mA, 40V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF, TO-77, 6 PIN 600mA, 40V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF, TO-77, 6 PIN 600mA, 40V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF, TO-77, 6 PIN 600mA, 40V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF, TO-77, 6 PIN 600mA, 40V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF, TO-77, 6 PIN
是否无铅 不含铅 含铅 含铅 含铅 含铅
是否Rohs认证 符合 符合 不符合 不符合 不符合
零件包装代码 TO-77 TO-77 TO-77 TO-77 TO-77
包装说明 CYLINDRICAL, O-MBCY-W6 CYLINDRICAL, O-MBCY-W6 CYLINDRICAL, O-MBCY-W6 CYLINDRICAL, O-MBCY-W6 CYLINDRICAL, O-MBCY-W6
针数 8 8 8 8 8
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A
集电极-发射极最大电压 40 V 40 V 40 V 40 V 40 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 40 40 40 40 40
JEDEC-95代码 MO-002AF MO-002AF MO-002AF MO-002AF MO-002AF
JESD-30 代码 O-MBCY-W6 O-MBCY-W6 O-MBCY-W6 O-MBCY-W6 O-MBCY-W6
元件数量 2 2 2 2 2
端子数量 6 6 6 6 6
封装主体材料 METAL METAL METAL METAL METAL
封装形状 ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
最大关闭时间(toff) 310 ns 310 ns 310 ns 310 ns 310 ns
最大开启时间(吨) 45 ns 45 ns 45 ns 45 ns 45 ns
Base Number Matches 1 1 1 1 1
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