Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
厂商名称:Fairchild
厂商官网:http://www.fairchildsemi.com/
下载文档型号 | 2N5877 | 2N6109 | 2N5069 | 2N6130 | 2N6132 | 2N6133 | 2N5872 | 2N5874 | 2N5871 |
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描述 | Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | Transistor, | Transistor, | Transistor, | Transistor, | Transistor, | Transistor, | Transistor, | Transistor, |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | unknow | compli | compli | compli | compli | compli | compli | compli | compli |
最大集电极电流 (IC) | 8 A | 7 A | 5 A | 7 A | 7 A | 7 A | 7 A | 7 A | 7 A |
配置 | SINGLE | Single | Single | Single | Single | Single | Single | Single | Single |
最小直流电流增益 (hFE) | 20 | 30 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
最高工作温度 | 200 °C | 150 °C | 175 °C | 150 °C | 150 °C | 150 °C | 200 °C | 200 °C | 200 °C |
极性/信道类型 | NPN | PNP | NPN | NPN | PNP | PNP | PNP | NPN | PNP |
最大功率耗散 (Abs) | 150 W | 40 W | 88 W | 50 W | 50 W | 50 W | 100 W | 100 W | 100 W |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
标称过渡频率 (fT) | 4 MHz | 10 MHz | 4 MHz | 2.5 MHz | 2.5 MHz | 2.5 MHz | 4 MHz | 4 MHz | 4 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |