PNP - 2N6040, 2N6042,
NPN - 2N6043, 2N6045
Plastic Medium-Power
Complementary Silicon
Transistors
Plastic medium−power complementary silicon transistors are
designed for general−purpose amplifier and low−speed switching
applications.
Features
www.onsemi.com
•
High DC Current Gain − h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
•
Collector−Emitter Sustaining Voltage − @ 100 mAdc −
•
•
•
•
•
V
CEO(sus)
= 60 Vdc (Min) − 2N6040, 2N6043
= 100 Vdc (Min) − 2N6042, 2N6045
Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 4.0 Adc − 2N6043,44
= 2.0 Vdc (Max) @ I
C
= 3.0 Adc − 2N6042, 2N6045
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
These Devices are Pb−Free and are RoHS Compliant*
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 − 100 VOLTS, 75 WATTS
MAXIMUM RATINGS
(Note 1)
Rating
Collector−Emitter Voltage
2N6040
2N6043
2N6042
2N6045
2N6040
2N6043
2N6042
2N6045
Symbol
V
CEO
Value
60
100
V
CB
60
100
V
EB
Continuous
Peak
I
C
I
B
P
D
T
J
, T
stg
5.0
8.0
16
120
75
0.60
–65 to +150
Vdc
Adc
mAdc
W
W/°C
°C
Vdc
Unit
Vdc
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
Collector−Base Voltage
2N604xG
AYWW
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
2N604x = Device Code
x = 0, 2, 3, or 5
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 10
Publication Order Number:
2N6040/D
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
ÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
Characteristic
Symbol
q
JC
q
JA
Max
Unit
Thermal Resistance, Junction−to−Case
1.67
57
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient
*ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
(V
CE
= 100 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C)
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C)
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0)
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 16 mAdc)
(I
C
= 3.0 Adc, I
B
= 12 mAdc)
(I
C
= 8.0 Adc, I
B
= 80 Adc)
Base−Emitter Saturation Voltage (I
C
= 8.0 Adc, I
B
= 80 mAdc)
Base−Emitter On Voltage (I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
Small−Signal Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 kHz)
Symbol
Min
Max
Unit
V
CEO(sus)
2N6040, 2N6043
2N6042, 2N6045
I
CEO
2N6040, 2N6043
2N6042, 2N6045
I
CEX
2N6040, 2N6043
2N6042, 2N6045
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
I
CBO
2N6040, 2N6043
2N6042, 2N6045
I
EBO
−
−
−
20
20
2.0
−
−
−
−
−
20
20
200
200
200
−
−
20
20
60
100
Vdc
−
−
mA
mA
mA
mAdc
h
FE
2N6040, 2N6043,
2N6042, 2N6045
All Types
V
CE(sat)
2N6040, 2N6043,
2N6042, 2N6045
All Types
V
BE(sat)
V
BE(on)
−
−
−
−
−
2.0
2.0
4.0
4.5
2.8
1000
1000
100
20.000
20,000
−
−
Vdc
Vdc
Vdc
|h
fe
|
2N6040/2N6042
2N6043/2N6045
C
ob
h
fe
4.0
−
−
300
−
300
200
−
pF
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data.
http://onsemi.com
2
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
T
A
T
C
4.0 80
PD, POWER DISSIPATION (WATTS)
3.0 60
2.0 40
T
C
1.0 20
T
A
0
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
5.0
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
V
2
approx
+ 8.0 V
0
V
1
approx
-12 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
R
B
D
1
+ 4.0 V
25
ms
for t
d
and t
r
, D
1
is disconnected
and V
2
= 0
For NPN test circuit reverse all polarities and D1.
V
CC
- 30 V
R
C
3.0
2.0
1.0
0.7
0.5
t
s
t
f
TUT
t, TIME (
μ
s)
SCOPE
≈
8.0 k
≈
120
0.3
0.2 V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
0.1 T
J
= 25°C
PNP
0.07
t
d
@ V
BE(off)
= 0 V
NPN
0.05
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
t
r
5.0 7.0
10
Figure 2. Switching Times Equivalent Circuit
Figure 3. Switching Times
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
P
(pk)
q
JC
(t) = r(t)
q
JC
q
JC
= 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
READ TIME AT t
1
t
2
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
DUTY CYCLE, D = t
1
/t
2
0.1
0.07
0.05
0.03
0.02
0.05
0.02
SINGLE PULSE
0.01
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
http://onsemi.com
3
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
20
10
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
500
ms
1.0 ms
dc
5.0 ms
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
2N6040, 2N6043
2N6045
5.0 7.0 10
20 30
2.0 3.0
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
100
ms
0.1
0.05
0.02
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150°C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active−Region Safe Operating Area
10,000
hfe, SMALL-SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
PNP
NPN
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
T
C
= 25°C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
C, CAPACITANCE (pF)
300
T
J
= 25°C
200
C
ob
100
70
50
PNP
NPN
30
0.1
100
0.2
20
0.5
1.0 2.0
5.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
50
C
ib
Figure 6. Small−Signal Current Gain
Figure 7. Capacitance
PNP
2N6040, 2N6042
20,000
10,000
hFE , DC CURRENT GAIN
7000
5000
3000
2000
1000
700
500
300
200
0.1
V
CE
= 4.0 V
20,000
NPN
2N6043, 2N6045
V
CE
= 4.0 V
10,000
hFE , DC CURRENT GAIN
7000
5000
3000
2000
25°C
1000
700
500
300
200
0.1
T
J
= 150°C
T
J
= 150°C
25°C
- 55°C
- 55°C
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0 7.0
10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 8. DC Current Gain
http://onsemi.com
4
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.6
I
C
= 2.0 A
2.2
4.0 A
6.0 A
3.0
T
J
= 25°C
2.6
I
C
= 2.0 A
2.2
4.0 A
6.0 A
1.8
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
B
, BASE CURRENT (mA)
20
30
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
I
B
, BASE CURRENT (mA)
10
20
30
Figure 9. Collector Saturation Region
3.0
T
J
= 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.5
2.0
2.0
V
BE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 4.0 V
1.0
V
CE(sat)
@ I
C
/I
B
= 250
1.5
V
BE
@ V
CE
= 4.0 V
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
1.5
1.0
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0
7.010
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0
7.0
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
ORDERING INFORMATION
Device
2N6040G
2N6042G
2N6043G
2N6045G
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
http://onsemi.com
5
