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2N6661-JQR-B

Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：TT Electronics plc

厂商官网：http://www.ttelectronics.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
compliant
ECCN代码
EAR99
外壳连接
DRAIN
配置
SINGLE
最小漏源击穿电压
90 V
最大漏极电流 (ID)
0.9 A
最大漏源导通电阻
4 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)
10 pF
JEDEC-95代码
TO-205AD
JESD-30 代码
O-MBCY-W3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
N-CHANNEL
认证状态
Not Qualified
表面贴装
NO
端子形式
WIRE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
2N6661
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
5.08 (0.200)
typ.
• Switching Regulators
• Converters
2.54
(0.100)
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
3
• Motor Drivers
45°
Underside View
TO–39
PACKAGE (TO-205AD)
Pin 1 – Source
Pin 2 – Gate
Pin 3 – Drain
Case – Drain
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25°C unless otherwise stated)
V
DS
V
GS
I
D
I
D
I
DM
P
D
P
D
T
j
T
stg
T
L
Drain – Source Voltage
Gate – Source Voltage
Drain Current
Drain Current
Pulsed Drain Current *
Power Dissipation
Power Dissipation
Storage Temperature Range
Lead Temperature (
16
from case for 10 sec.)
1 ”
90V
±20V
@ T
CASE
= 25°C
@ T
CASE
= 100°C
@ T
CASE
= 25°C
@ T
CASE
= 100°C
0.9A
0.7A
3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
Operating Junction Temperature Range
*
Pulse Width Limited by Maximum Junction Temperature
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3092
Issue 1
2N6661
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25°C unless otherwise stated)
Parameter
STATIC CHARACTERISTICS
V
(BR)DSS
Drain – Source Breakdown Voltage
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate – Body Leakage Current
V
GS
= 0V
V
DS
= V
GS
V
GS
= ±15V
V
DS
= 0V
V
DS
= 90V
I
DSS
I
D(on)*
Zero Gate Voltage Drain Current
On–State Drain Current
V
DS
= 72V
V
DS
= 15V
V
GS
= 5V
R
DS(on)*
Drain – Source On Resistance
V
GS
= 10V
I
D
= 1A
V
GS
= 5V
V
DS(on)*
g
FS*
g
OS*
Drain – Source On Voltage
Forward Transconductance
Common Source Output Conductance
DYNAMIC CHARACTERISTICS
R
DS(on)
C
ds
C
iss
C
oss
C
rss
t
ON
t
OFF
Small Signal Drain – Source
On Resistance
Drain – Source Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Time
Turn–Off Time
V
DD
= 25V
R
L
= 23Ω
I
D
= 1A
* Pulse Test: t
p
≤
80
µs
,
δ ≤
1%
V
GEN
= 10V
R
G
= 25Ω
8
10
6
10
ns
V
GS
= 10V
f = 1kHz
V
DS
= 24V
V
GS
= 0V
f = 1MHz
I
D
= 1A
3.6
30
35
15
2
4
40
50
40
10
pF
Ω
V
GS
= 10V
I
D
= 1A
V
DS
= 10V
V
DS
= 10V
T
CASE
= 125°C
I
D
= 0.5A
I
D
= 0.1A
170
T
CASE
= 125°C
I
D
= 0.3A
T
CASE
= 125°C
V
GS
= 0V
V
GS
= 0V
T
CASE
= 125°C
V
GS
= 10V
I
D
= 0.3A
1.5
1.8
4.2
3.6
6.8
1.26
3.6
6.8
350
225
5.3
4
9
1.6
4
9
ms
µs
V
Ω
I
D
= 10µA
I
D
= 1mA
90
0.8
120
1.6
2
±100
±500
10
500
µA
A
V
nA
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
R
θJA
R
θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Min.
Typ.
Max.
170
8.3
Unit
K/W
K/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3092
Issue 1
Search Results
Part number search for devices
beginning "2N6661-JQR"
Semelab Home
Datasheets are downloaded
as Acrobat PDF files.
Fet Products
PRODUCT
2N6661-JQR-B
Polarity
N-Channel
Package
TO39
V
DSS
(V)
90V
I
D(cont)
(A)
0.9A
P
D
(W)
6.25W
R
DSS
(Ω)
4
C
ISS
(pF)
5pF (max)
Q
G
(nC)
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参数对比
与2N6661-JQR-B相近的元器件有：2N6661-JQR-BR1、2N6661-JQR-AE4、2N6661-JQR-A。描述及对比如下：
型号 2N6661-JQR-B 2N6661-JQR-BR1 2N6661-JQR-AE4 2N6661-JQR-A
描述 Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN
是否Rohs认证 不符合 符合 符合 不符合
包装说明 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
外壳连接 DRAIN DRAIN DRAIN DRAIN
配置 SINGLE SINGLE SINGLE SINGLE
最小漏源击穿电压 90 V 90 V 90 V 90 V
最大漏极电流 (ID) 0.9 A 0.9 A 0.9 A 0.9 A
最大漏源导通电阻 4 Ω 4 Ω 4 Ω 4 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss) 10 pF 10 pF 10 pF 10 pF
JEDEC-95代码 TO-205AD TO-205AD TO-205AD TO-205AD
JESD-30 代码 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
元件数量 1 1 1 1
端子数量 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 METAL METAL METAL METAL
封装形状 ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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器件捷径:
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