UNISONIC TECHNOLOGIES CO., LTD
2N7002LL
Preliminary
Power MOSFET
60V, 115mA, N-CHANNEL
MOSFET
DESCRIPTION
The UTC
2N7002LL
uses advanced technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
3
1
2
SOT-23
FEATURES
* R
DS(ON)
= 7.5Ω @V
GS
= 10 V
* Low reverse transfer capacitance ( C
RSS
= typical 5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
3. Drain
Lead-free:
2N7002LLK
Halogen-free: 2N7002LLG
2.Gate
1.Source
ORDERING INFORMATION
Normal
2N7002LL-AE3-R
Ordering Number
Lead Free
2N7002LLK-AE3-R
Halogen-Free
2N7002LLG-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
7PLL
L: Lead Free
L: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-284.b
2N7002L
PARAMETER
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
a
=25°C)
RATINGS
UNIT
Drain-Source Voltage
V
60
V
Drain-Gate Voltage (R
G
=1.0MΩ)
60
V
Continuous
±20
Gate-Source Voltage
V
Non-repetitive (t
P
≦50s)
±40
Continuous(T
C
=25°C)
±115
Drain Current
I
D
mA
Pulse(Note 2)
±800
225
mW
Power Dissipation (T
a
= 25°C)
P
D
Derate above 25°C
1.8
mW /°C
Junction Temperature
T
J
℃
+150
Storage Temperature
T
STG
℃
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦300μs, Duty cycle≦2%
SYMBOL
V
DSS
V
DGR
V
GSS
V
GSM
THERMAL DATA
PARAMETER
Junction-to-Ambient
SYMBOL
θ
JA
RATINGS
556
UNIT
℃
/W
ELECTRICAL CHARACTERISTICS
(T
a
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note)
Gate Threshold Voltage
Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On-Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
V
DS(ON)
I
D(ON)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=10µA
V
DS
=60V, V
GS
=0V (T
J
=25°C)
V
GS
=±20V, V
DS
=0V
MIN
60
1.0
±100
2.5
3.75
0.375
7.5
7.5
TYP
MAX UNIT
V
µA
nA
V
V
mA
Ω
mS
50
25
5.0
20
40
1.5
115
800
pF
pF
pF
ns
ns
V
mA
mA
Forward Transconductance
g
FS
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
V
DD
=25V, I
D
=500mA,
Turn-ON Delay Time
t
D(ON)
V
GEN
=10V, R
G
=25Ω, R
L
=50Ω
Turn-OFF Delay Time
t
D(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
=115mA, V
GS
=0V
Maximum Body-Diode Continuous Current
I
S
Source Current Pulsed
I
SM
Note: Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2.0%.
V
DS
=V
GS
, I
D
=250 µA
1.0
V
GS
=10V, I
D
=500 mA
V
GS
=5V, I
D
=50mA
V
DS
≧2.0V
DS(ON)
, V
GS
=10V
500
V
GS
=10V, I
D
=500mA(T
C
=25°C)
V
GS
=5V, I
D
=50mA(T
C
=25°C)
V
DS
≧2.0V
DS(ON)
, I
D
=200mA
80
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-284.b
2N7002L
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-284.b
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