SMD MOSFET
2N7002W1
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~3
Rating and characteristic curves........................................................ 4
Pinning information........................................................................... 5
Marking........................................................................................... 5
Suggested solder pad layout............................................................. 5
Packing information.......................................................................... 6
Reel packing.................................................................................... 7
Suggested thermal profiles for soldering processes............................. 7
High reliability test capabilities........................................................... 8
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2013/03/22
Revised Date
-
Revision
A
Page.
8
Page 1
DS-25111B
SMD MOSFET
2N7002W1
60V N-Channel Enhancement
Mode MOSFET
Package outline
Formosa MS
SOT-323
0.026 (0.65)Max
Features
•
Advanced trench process technology.
•
High density cell design for ultra low on-resistance.
•
Specially designed for battery operated system,
•
•
solid-state relays drivers, relays, displays, lamps,
solenoids, memories, etc.
Pb−Free Package is Available
.
Suffix "-H" indicates Halogen-free part, ex. 2N7002W1-H.
0.088 (2.20)
0.072 (1.80)
.056(1.40)
0.016 (0.40)
(C)
.048(1.20)
(B)
(A)
0.054 (1.35)
0.046 (1.15)
0.096 (2.40)
0.080 (2.00)
0.021 (0.53)
0.017 (0.42)
0.010 (0.25)
0.012 (0.30)
Revised Date
-
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-323
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.040 (1.00)
0.032 (0.80)
Dimensions in inches and (millimeters)
•
Mounting Position : Any
•
Weight : Approximated 0.006 gram
M
aximum ratings
(AT T
PARAMETER
Drain-source voltage
Drain-gate voltage(R
GS
=1.0MΩ)
Drain Current
-Continuous TC=25°C(Note 1)
TC=100°C(Note 1)
-Pulsed(Note 2)
A
=25 C unless otherwise noted)
Symbol
V
DSS
V
DGR
I
D
I
D
I
DM
V
GS
V
GSM
MIN.
TYP.
MAX.
60
60
±115
±75
±800
±20
±40
UNIT
V
V
o
mA
Gate to source voltage-continue
-non-repetitive (tp≤50us)
V
Vpk
Thermal characteristics
PARAMETER
Total device dissipation FR-5 board
(Note 3)
T
A
= 25
O
C
Derate above 25
O
C
Thermal resistance
Total device dissipation alumina
substrate(Note 4)
Junction to ambient
T
A
= 25
O
C
Derate above 25
O
C
Thermal resistance
Junction temperature
Storage temperature
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width≤300us Duty Cycle≤2.0%.
3. FR-5=1.0x0.75x0.062 in.
4. Alumina= 0.4x0.3x0.025 in 99.5%alumina.
Junction to ambient
R
θJA
T
J
T
STG
-55
-55
R
θJA
P
D
Symbol
P
D
MIN.
TYP.
MAX.
225
1.8
556
300
2.4
417
+150
+150
UNIT
mW
mW/
O
C
O
C/W
mW
mW/
O
C
O
C/W
o
C
C
o
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2013/03/22
0.004 (0.10)
Revision
A
Page.
8
Page 2
DS-25111B
SMD MOSFET
2N7002W1
Electrical characteristics
(AT T =25 C unless otherwise noted)
o
A
Formosa MS
CONDITIONS
V
GS
= 0V, I
D
= 10uA
V
DS
= 60V, V
GS
= 0V, T
J
= 25 C
V
DS
= 60V, V
GS
= 0V, T
J
= 125
O
C
V
GS
= 20V
V
GS
= -20V
V
DS
= V
GS
, I
D
= 250uA
V
DS
> 20V
DS(on)
, V
GS
= 10V
V
GS
= 10V, I
D
= 500mA , T
J
= 25
O
C
V
GS
= 10V, I
D
= 500mA, T
J
= 125
O
C
V
GS
= 5.0V, I
D
= 50mA , T
J
= 25
O
C
V
GS
= 5.0V, I
D
= 50mA, T
J
= 125
O
C
V
GS
= 10V, I
D
= 0.5A
V
GS
= 5.0V, I
D
= 50mA
V
DS
> 2.0V
DS(on)
, I
D
= 200mA*
O
PARAMETER
Drain-source breakdown voltage
Drain-source leakage current
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
I
D(on)
MIN.
60
TYP.
MAX.
UNIT
V
1.0
500
100
-100
1.0
500
1.4
-
1.8
-
7.5
13.5
7.5
13.5
3.75
0.375
80
17
10
2.5
7
11
50
25
5.0
20
1.6
2.5
uA
uA
nA
nA
V
mA
Gate-body leakage current-forward
Gate-body leakage current-reverse
Gate threshold voltage*
On-state drain current
Static drain-source on-resistance*
R
DS(on)
Ω
Drain-source on-voltage*
V
DS(on)
V
mmhos
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-On Delay Time
Turn-Off Delay Time
Diode forward on-voltage
Source current continuous
Source current pulsed
*Pules test : Pules width < 300us, duty cycle < 2%
g
FS
C
iss
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
C
oss
C
rss
pF
V
DD
= 25V, I
D
= 500mA,
V
gen
= 10V, R
G
= 25Ω, R
L
= 50Ω*
I
S
= 11.5mA, V
GS
= 0V
Body diode
t
d(on)
t
d(off)
V
SD
I
S
I
SM
ns
40
-1.5
-115
-800
V
mA
mA
Switching
Test Circuit
Gate Charge
Test Circuit
V
DD
V
DD
R
L
V
IN
D
V
OUT
V
GS
R
G
G
S
1mA
DUT
R
L
V
GS
D
G
R
G
S
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2013/03/22
Revised Date
-
Revision
A
Page.
8
Page 3
DS-25111B
Rating and characteristic curves (2N7002W1)
2.0
I
D
,DRIAN
CURRENT(A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
7V
6V
5V
4V
3V
9.0
10
Ta
=25°C
I
D
,DRIAN
CURRENT(A)
V
GS
=10V
9V
8V
1.0
V
GS
=10V
0.8
-55°C
125°C
25°C
0.6
0.4
0.2
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
V
DS
,DRAIN
SOURCE VOLTAGE(V)
V
GS
,GATE
SOURCE VOLTAGE(V)
FIG.1 Ohmic Region
FIG.2 Transfer Characteristics
V
GS(th)
,THRESHOLD
VOLTAGE
(NORMZLIZED)
rDS(on)
,STATIC
DRAIN-SOURCE ON-RESISTANCE
2.4
2.2
2.0
(NORMALIZED)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
+20
+60
+100
+140
V
GS
=10V
I
D
=200mA
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
+100
+140
V
DS
=V
GS
I
D
=1.0mA
T,TEMPERATURE(°C)
T,TEMPERATURE(°C)
FIG.3 Temperature Versus Static
Drain-Source On-Resistance
FIG.4 Temperature Versus Gate
Threshold Voltage
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2013/03/22
Revised Date
-
Revision
A
Page.
8
Page 4
DS-25111B
SMD MOSFET
2N7002W1
Pinning information
Pin
PinD
PinG
PinS
Drain
Gate
Source
G
S
Formosa MS
Simplified outline
D
Symbol
Drain
Gate
Source
Marking
Type number
2N7002W1
Marking code
6C
Suggested solder pad layout
SOT-323
0.025(0.65)
0.025(0.65)
0.075(1.9)
0.035(0.90)
0.028(0.70)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2013/03/22
Revised Date
-
Revision
A
Page.
8
Page 5
DS-25111B
嵌入式系统
