2N7228
MECHANICAL DATA
Dimensions in mm (inches)
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
Dia.
3.78 (0.149)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
N–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
1
2
3
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
20.07 (0.790)
20.32 (0.800)
500V
12A
Ω
0.415Ω
3.81 (0.150)
BSC
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN A SURFACE
MOUNT PACKAGE
• EASE OF PARALLELING
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
T
L
R
θJC
R
θCS
R
θJA
Gate – Source Voltage
Continuous Drain Current
(V
GS
= 10V , T
case
= 25°C)
Continuous Drain Current
(V
GS
= 10V , T
case
= 100°C)
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
1
Repetitive Avalanche Energy
1
Peak Diode Recovery
3
Operating and Storage Temperature Range
Lead Temperature measured
1/16
” (1.6mm) from case for 10 sec.
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
±20V
12A
8A
48A
150W
1.2W/°C
750mJ
12A
15mJ
3.5V/ns
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ V
DD
= 50V , L
≥
9.4mH , R
G
= 25Ω , Peak I
L
= 12A , Starting T
J
= 25°C
3) @ I
SD
≤
12A , di/dt
≤
130A/µs , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 2.35Ω
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
4/99
2N7228
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance
2
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
I
D
= 8A
I
D
= 12A
I
D
= 250µA
I
DS
= 8A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
500
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
0.68
0.415
0.515
2
6.5
25
250
100
–100
2700
600
240
12
55
5
27
120
19
70
35
190
170
130
12
48
4
V / °C
Ω
V
S(Ω
µA
nA
)
Ω
(
4/99
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 12A
V
DS
= 0.5BV
DSS
V
DD
= 250V
I
D
= 12A
R
G
= 2.35Ω
pF
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
A
V
ns
µC
I
S
= 12A
V
GS
= 0
I
F
= 12A
T
J
= 25°C
T
J
= 25°C
Negligible
8.7
8.7
1.7
1600
14
d
i
/ d
t
≤
100A/µs V
DD
≤
50V
nH
Notes
1) Repetitive Rating – Pulse width limited by Maximum
Junction Temperature
2) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
* I
S
Current limited by pin diameter.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
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