2SA1530-12-1Q,2SA1530-12-1Q pdf中文资料,2SA1530-12-1Q引脚图,2SA1530-12-1Q电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

包装说明

SMALL OUTLINE, R-PDSO-G3

Reach Compliance Code

unknow

ECCN代码

EAR99

最大集电极电流 (IC)

0.1 A

集电极-发射极最大电压

50 V

配置

SINGLE

最小直流电流增益 (hFE)

120

JEDEC-95代码

TO-236

JESD-30 代码

R-PDSO-G3

元件数量

端子数量

封装主体材料

PLASTIC/EPOXY

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE

极性/信道类型

PNP

认证状态

Not Qualified

表面贴装

YES

端子形式

GULL WING

端子位置

DUAL

晶体管应用

AMPLIFIER

晶体管元件材料

SILICON

标称过渡频率 (fT)

200 MHz

Base Number Matches

参数对比

与2SA1530-12-1Q相近的元器件有：2SA1530-T12-1T、2SA1530-T12-1S、2SA1530-T12-1Q、2SA1530-12-1T、2SA1530-12-1S、2SA1530-T12-1R、2SA1530-12-1R。描述及对比如下：

型号	2SA1530-12-1Q	2SA1530-T12-1T	2SA1530-T12-1S	2SA1530-T12-1Q	2SA1530-12-1T	2SA1530-12-1S	2SA1530-T12-1R	2SA1530-12-1R
描述	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	120	390	270	120	390	270	180	180
JEDEC-95代码	TO-236	TO-236	TO-236	TO-236	TO-236	TO-236	TO-236	TO-236
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Base Number Matches	1	1	1	1	1	1	1	1