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DATA SHEET
PNP SILICON EPITAXIAL TRANSISTOR
2SA1836
PNP SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
FEATURES
1.6 ± 0.1
0.8 ± 0.1
•
High DC current gain: h
FE2
= 200 TYP.
•
High voltage: V
CEO
=
−50
V
•
Can be automatically mounted
3
0 to 0.1
2
0.2
+0.1
–0
1
ORDERING INFORMATION
0.5
0.5
0.6
0.75 ± 0.05
PART NUMBER
2SA1836
PACKAGE
SC-75 (USM)
1.0
1.6 ± 0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Notes 1.
PW
≤
10 ms, Duty Cycle
≤
50%
2
2.
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
1: Emitter
2: Base
3: Collector
V
CBO
V
CEO
V
EBO
I
C(DC)
−60
−50
−5.0
−100
−200
200
150
–55 to + 150
V
V
V
mA
mA
mW
°C
°C
Note1
Note2
I
C(pulse)
P
T
T
j
T
stg
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15615EJ2V0DS00 (2nd edition)
Date Published October 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
2SA1836
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Note
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
TEST CONDITIONS
V
CB
=
−60
V, I
E
= 0
V
EB
=
−5.0
V, I
C
= 0
V
CE
=
−6.0
V, I
C
=
−0.1
mA
V
CE
=
−6.0
V, I
C
=
−1.0
mA
V
CE
=
−6.0
V, I
C
=
−1.0
mA
I
C
=
−100
mA, I
B
=
−10
mA
I
C
=
−100
mA, I
B
=
−10
mA
V
CE
=
−6.0
V, I
E
= 10 mA
V
CE
=
−6.0
V, I
E
= 0 mA, f = 1.0 MHz
MIN.
TYP.
MAX.
−100
−100
UNIT
nA
nA
−
50
90
200
−0.62
−0.18
−0.86
50
180
4.5
6.0
−0.30
−1.00
600
−
V
V
V
MHz
pF
Base to Emitter Voltage
Note
Note
V
BE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Collector Saturation Voltage
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Note
Note
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2%
h
FE
CLASSFICATION
Marking
h
FE2
M4
90 to 180
M5
135 to 270
M6
200 to 400
M7
300 to 600
2
Data Sheet D15615EJ2V0DS
2SA1836
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
−100
V
CE
=
−6.0
V
P
T
- Total Power Dissipation - mW
Free air
W
I
C
- Collector Current - mA
250
200
150
100
50
he
nm
ou
−30
−10
5˚C
=7
25
˚C
nte
d
on
−3
−1
−0.3
−0.1
ce
ra
ate
of
3
.0
cm
2
x0
.64
mm
−0.03
150
0
25
50
75
100
125
−0.01
−0.4
−0.5
−0.6
–25
str
T
A
−0.7
˚C
mi
cs
ub
−0.8
−0.9
−1.0
T
A
- Ambient Temperature -
˚C
V
BE
- Base to Emitter Voltage - V
−100
I
C
- Collector Current - mA
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
−
1.6
.4
−
1
−
1.2
−
2.0
−
1.8
−8
I
C
- Collector Current - mA
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
−80
−60
−40
−20
−
45
−6
−
40
−
35
−4
−
30
−
25
−
20
−2
−
15
−
10
I
B
=
−
5.0
µA
−10
−20
−30
−40
−
1.0
−
0.8
−0.6
−0.4
I
B
=
−0.2
mA
0
−0.2
−0.4
−0.6
−0.8
−1.0
0
V
CE
- Collector to Emitter Voltage - V
V
CE
- Collector to Emitter Voltage - V
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
V
BE(sat)
- Base Saturation Voltage - V
V
CE(sat)
- Collector Saturation Voltage - V
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
10
f = 1.0 MHz
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−1
V
BE(sat)
C
ob
- Output Capacitance - pF
I
C
= 10
.
I
B
5
2
1
0.5
0.2
0.1
−1
−2
−5
−10
−20
−50
−100
V
CE(sat)
−2
−5
−10
−20
−50
−100
I
C
- Collector Current - mA
V
CB
- Collector to Base Voltage - V
Data Sheet D15615EJ2V0DS
3
