Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1869
DESCRIPTION
·With
TO-220F package
·Complement
to type 2SC4935
APPLICATIONS
·Power
amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-50
-50
-5
-3
-0.3
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
j
T
stg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-10mA ; I
B
=0
B
2SA1869
MIN
-50
TYP.
MAX
UNIT
V
I
C
=-2A ;I
B
=-0.2A
B
-0.3
-0.8
-0.6
-1.0
-1.0
-1.0
V
V
μA
μA
I
C
=-0.5A ; V
CE
=-2V
V
CB
=-50V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
I
C
=-2.5A ; V
CE
=-2V
I
E
=0; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-2V
70
30
240
35
100
pF
MHz
h
FE-1
Classifications
O
70-140
Y
120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1869
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1869
4
