Power Transistors
2SB0954, 2SB0954A
(2SB954, 2SB954A)
Silicon PNP epitaxial planar type
For power amplification
M
Di ain
sc te
on na
tin nc
ue e/
d
G
G
0.7±0.1
I
Features
G
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
4.2±0.2
I
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
Collector to
2SB0954
base voltage
Collector to
2SB0954A
2SB0954
(T
C
=25˚C)
–60
–80
–60
–80
–5
–2
–1
30
2
emitter voltage 2SB0954A
Emitter to base voltage
Peak collector current
Collector current
V
CEO
V
EBO
I
CP
I
C
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
T
stg
I
Electrical Characteristics
Parameter
Collector cutoff
current
2SB0954
2SB0954A
2SB0954
(T
C
=25˚C)
Symbol
ue
I
CEO
I
CES
Collector cutoff
current
co
2SB0954A
/D
Collector to emitter
voltage
2SB0954
is
Emitter cutoff current
I
EBO
ce
2SB0954A
V
CEO
h
FE1*
h
FE2
V
BE
f
T
t
on
t
stg
t
f
en
Forward current transfer ratio
Collector to emitter saturation voltage
V
CE(sat)
M
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
Pl
e
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Note.) The Part numbers in the Parenthesis show conventional part number.
Rank
h
FE1
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
7.5±0.2
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
Ratings
Unit
V
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
0.5
+0.2
–0.1
V
V
A
A
0.8±0.1
2.54±0.25
5.08±0.5
2
1
3
W
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
150
˚C
˚C
–55 to +150
Conditions
min
typ
max
Unit
µA
µA
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
–300
–300
–200
–200
–1
nt
in
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
EB
= –5V, I
C
= 0
mA
V
I
C
= –30mA, I
B
= 0
–60
–80
70
15
an
V
CE
= –4V, I
C
= – 0.2A
250
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –1A
nt
I
C
= –1A, I
B
= – 0.125A
–1
V
V
ai
–1.3
V
CE
= –5V, I
C
= – 0.2A, f = 10MHz
I
C
= –1A, I
B1
= – 0.1A, I
B2
= 0.1A,
V
CC
= –50V
30
0.5
1.2
0.3
MHz
µs
µs
µs
1
Power Transistors
P
C
— Ta
50
–2.5
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
I
B
=–40mA
–30mA
–25mA
–1.5
–20mA
–10mA
–1.0
–8mA
–6mA
–4mA
–2mA
T
C
=25˚C
2SB0954, 2SB0954A
I
C
— V
CE
–10
V
CE
=–4V
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
30
Collector current I
C
(A)
40
–2.0
–8
–6
25˚C
T
C
=100˚C
–4
–25˚C
(1)
20
10
(3)
(4)
0
0
20
40
(2)
– 0.5
–2
0
60
80 100 120 140 160
0
–1
–2
–3
–4
–5
–6
0
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=10
–30
–10
–3
–1
25˚C
T
C
=100˚C
–25˚C
10000
h
FE
— I
C
10000
V
CE
=–4V
3000
1000
300
100
30
10
3
f
T
— I
C
V
CE
=–5V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
T
C
=100˚C
–25˚C
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency f
T
(MHz)
–1
–3
–10
3000
–1
–3
–10
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
–100
–30
10
3
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
–10
–3
–1
I
CP
t=10ms
I
C
DC
10
(2)
– 0.3
– 0.1
1
10
–1
– 0.03
– 0.01
–1
–3
–10
–30
–100 –300 –1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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