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2SB1205STP

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
包装说明
IN-LINE, R-PSIP-T3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
外壳连接
COLLECTOR
最大集电极电流 (IC)
5 A
集电极-发射极最大电压
20 V
配置
SINGLE
最小直流电流增益 (hFE)
140
JESD-30 代码
R-PSIP-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
极性/信道类型
PNP
最大功率耗散 (Abs)
10 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
320 MHz
Base Number Matches
1
参数对比
与2SB1205STP相近的元器件有:2SB1205RTP、2SB1205RTP-FA、2SB1205TTP-FA、2SB1205TTP、2SB1205TP、2SB1205TP-FA、2SB1205STP-FA。描述及对比如下:
型号 2SB1205STP 2SB1205RTP 2SB1205RTP-FA 2SB1205TTP-FA 2SB1205TTP 2SB1205TP 2SB1205TP-FA 2SB1205STP-FA
描述 Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN
包装说明 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
针数 3 3 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknown unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 5 A 5 A 5 A 5 A 5 A 5 A 5 A 5 A
集电极-发射极最大电压 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 140 100 100 200 200 60 60 140
JESD-30 代码 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 2 2 3 3 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO YES YES NO NO YES YES
端子形式 THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 320 MHz 320 MHz 320 MHz 320 MHz 320 MHz 320 MHz 320 MHz 320 MHz
最大功率耗散 (Abs) 10 W 10 W 10 W 10 W 10 W - - 10 W
Base Number Matches 1 1 1 1 1 - 1 1
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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