INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SB703
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -80V(Min)
·DC
Current Gain-
: h
FE
= 40~200 @I
C
= -0.5A
·Complement
to Type 2SD743
APPLICATIONS
·Designed
for use in audio frequency power amplifier, low
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
w
.cn
i
em
cs
.is
w
w
VALUE
-80
UNIT
V
-80
-5
V
V
-4
A
-6
-1
40
150
-55~150
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
3.125
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB703
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA; I
B
= 0
-80
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -1mA; I
E
= 0
-80
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -1mA; I
C
= 0
-5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -3A; I
B
= -0.3A
B
-2.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current-Gain—Bandwidth Product
w
.cn
i
em
cs
.is
w
w
B
I
C
= -3A; I
B
= -0.3A
-2.0
V
V
CB
= -80V; I
E
= 0
-10
μA
V
EB
= -3V; I
C
= 0
-10
μA
I
C
= -20mA; V
CE
= -5V
30
I
C
= -0.5A; V
CE
= -5V
40
200
I
C
= -0.1A; V
CE
= -5V; f
test
= 1.0MHz
10
MHz
h
FE-2
Classifications
S
40-80
R
60-120
Q
100-200
isc Website：www.iscsemi.cn
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