2SB811J,2SB811J pdf中文资料,2SB811J引脚图,2SB811J电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

包装说明

IN-LINE, R-PSIP-T3

Reach Compliance Code

unknown

最大集电极电流 (IC)

1 A

集电极-发射极最大电压

25 V

配置

SINGLE

最小直流电流增益 (hFE)

135

JESD-30 代码

R-PSIP-T3

元件数量

端子数量

最高工作温度

150 °C

封装主体材料

PLASTIC/EPOXY

封装形状

RECTANGULAR

封装形式

IN-LINE

极性/信道类型

PNP

认证状态

Not Qualified

表面贴装

端子形式

THROUGH-HOLE

端子位置

SINGLE

晶体管应用

AMPLIFIER

晶体管元件材料

SILICON

标称过渡频率 (fT)

110 MHz

VCEsat-Max

0.35 V

Base Number Matches

参数对比

与2SB811J相近的元器件有：2SB811、2SB811H、2SB811M、2SB811F、2SB811E。描述及对比如下：

型号	2SB811J	2SB811	2SB811H	2SB811M	2SB811F	2SB811E
描述	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	1 A	1 A	1 A	1 A	1 A	1 A
集电极-发射极最大电压	25 V	25 V	25 V	25 V	25 V	25 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	135	50	170	110	200	250
JESD-30 代码	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	110 MHz	110 MHz	110 MHz	110 MHz	110 MHz	110 MHz
VCEsat-Max	0.35 V	0.35 V	0.35 V	0.35 V	0.35 V	0.35 V
Base Number Matches	1	1	1	1	1	1