This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB0930
(2SB930)
, 2SB0930A
(2SB930A)
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1253, 2SD1253A
■
Features
8.5
±0.2
6.0
±0.2
Unit: mm
3.4
±0.3
1.0
±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
4.4
±0.5
Parameter
Symbol
V
CBO
V
CEO
Rating
−60
−80
−60
−80
−5
−4
−8
40
Unit
V
2SB0930A
Collector-emitter voltage 2SB0930
(Base open)
2SB0930A
Emitter-base voltage (Collector open)
Collector current
V
(6.5)
V
EBO
I
C
I
CP
P
C
T
j
V
A
A
Peak collector current
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Collector power dissipation
W
Note) Self-supported type package is also prepared.
T
a
=
25°C
1.3
Junction temperature
Storage temperature
150
°C
T
stg
−55
to
+150
°C
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CES
Collector-emitter voltage
(Base open)
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Base open)
2SB0930
Conditions
Min
−60
−80
Typ
Max
(7.6)
Collector-base voltage
(Emitter open)
Unit
V
I
C
= −30
mA, I
B
=
0
ue
2SB0930A
2SB0930
nt
in
V
CE
=
−60
V, V
BE
= 0
V
CE
=
−30
V, I
B
= 0
V
CE
=
−60
V, I
B
= 0
V
EB
=
−5
V, I
C
= 0
−400
µA
µA
2SB0930A
2SB0930
co
V
CE
=
−80
V, V
BE
= 0
−400
is
I
CEO
I
EBO
h
FE2
V
BE
f
T
−700
−700
−1
250
ce
Emitter-base cutoff current (Collector open)
/D
2SB0930A
mA
V
an
Forward current transfer ratio
h
FE1 *
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −3
A
I
C
= −4
A, I
B
= −0.4
A
I
C
= −4
A,
70
15
en
ai
nt
Base-emitter voltage
V
CE
=
−4
V, I
C
=
−3
A
−2.0
−1.5
M
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
t
on
V
Pl
e
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
B1
= −
0.4 A, I
B2
= 0.4
A
V
CC
= −50
V
20
0.2
0.5
0.2
MHz
µs
µs
µs
t
stg
t
f
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Publication date: April 2003
Q
70 to 150
P
120 to 250
Note) The part number in the parenthesis shows conventional part number.
SJD00012BED
(1.5)
2SB0930
2.0
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
1
2
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
4.4
±0.5
•
High forward current transfer ratio h
FE
which has satisfactory linearity
•
Low collector-emitter saturation voltage V
CE(sat)
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
10.0
±0.3
1.5
±0.1
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0930, 2SB0930A
P
C
T
a
50
(1)T
C
=
T
a
(2)With a 50 mm
×
50 mm
×
2 mm Al heat sink
(3)Without heat sink
(P
C
=
1.3 W)
−6
I
C
V
CE
I
B
= −120
mA
T
C
=
25°C
−100
mA
−10
I
C
V
BE
V
CE
= −4
V
Collector power dissipation P
C
(W)
40
(1)
30
−5
−8
Collector current I
C
(A)
−4
Collector current I
C
(A)
−80
mA
−60
mA
−40
mA
−20
mA
−10
mA
−1
−8
mA
−5
mA
−6
T
C
=
100°C
25°C
−25°C
−3
20
−4
−2
10
(2)
(3)
0
−2
0
0
40
80
120
160
0
−2
−4
−6
−8
−10
−12
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
10
4
V
CE
= −4
V
10
4
f
T
I
C
V
CE
= −5
V
f
=
1 MHz
T
C
=
25°C
Forward current transfer ratio h
FE
−10
10
3
T
C
=
100°C
10
2
−25°C
25°C
Transition frequency f
T
(MHz)
−1
−10
10
3
−1
25°C
T
C
=
100°C
−25°C
10
2
−
0.1
10
10
−
0.01
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Safe operation area
−100
Non repetitive pulse
T
C
=
25°C
10
3
R
th
t
(1)Without heat sink
(2)With a 50 mm
×
50 mm
×
2 mm Al heat sink
(1)
(2)
10
Collector current I
C
(A)
−10
I
CP
I
C
t
=
1 ms
t
=
10 ms
t
=
300 ms
−1
Thermal resistance R
th
(°C/W)
10
2
1
−
0.1
10
−1
−
0.01
−1
−10
−100
−1
000
10
−2
10
−4
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
SJD00012BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
FPGA/CPLD
