INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC1061
DESCRIPTION
·Low
Collector Saturation Voltage-
:V
CE(
sat
)
= 1.0(V)(Max)@ I
C
= 2A
·DC
Current Gain-
: h
FE
= 35-320 @ I
C
= 0.5A
·Complement
to Type 2SA671
APPLICATIONS
·Designed
for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Collector Current-Continuous
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
50
50
4
3
8
0.5
25
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
5.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 50mA ; I
B
= 0
I
C
= 5mA ; I
E
= 0
I
E
= 5mA ; I
C
= 0
I
C
= 2A; I
B
= 0.2A
B
2SC1061
MIN
50
50
4
TYP.
MAX
UNIT
V
V
V
1.0
1.5
100
100
35
35
5
320
V
V
μA
μA
I
C
= 1A ; V
CE
= 4V
V
CB
= 25V ; I
E
= 0
V
EB
= 4V; I
C
= 0
I
C
= 0.1A ; V
CE
= 4V
I
C
= 1A ; V
CE
= 4V
I
C
= 0.5A; V
CE
= 4V; f
test
= 1MHz
MHz
h
FE-2
Classifications
A
35-70
B
60-120
C
100-200
D
160-320
isc Website：www.iscsemi.cn
2
嵌入式系统
