Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon,
厂商名称:NEC(日电)
下载文档型号 | 2SC1940M | 2SC1940K | 2SC1940L | 2SC1940 |
---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, |
Reach Compliance Code | unknown | unknown | unknown | unknown |
最大集电极电流 (IC) | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
集电极-发射极最大电压 | 120 V | 120 V | 120 V | 120 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 90 | 200 | 135 | 90 |
JESD-30 代码 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
极性/信道类型 | NPN | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 120 MHz | 120 MHz | 120 MHz | 120 MHz |
Base Number Matches | 1 | 1 | 1 | 1 |
基于收集器的最大容量 | 3 pF | 3 pF | 3 pF | - |
最高工作温度 | 150 °C | 150 °C | 150 °C | - |
VCEsat-Max | 0.6 V | 0.6 V | 0.6 V | - |