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2SC2544

Silicon NPN Epitaxial

器件类别:分立半导体    晶体管   

厂商名称:Hitachi (Renesas )

厂商官网:http://www.renesas.com/eng/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
CYLINDRICAL, O-PBCY-T3
Reach Compliance Code
unknow
最大集电极电流 (IC)
0.1 A
配置
Single
最小直流电流增益 (hFE)
250
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e0
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
NPN
最大功率耗散 (Abs)
0.4 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
标称过渡频率 (fT)
90 MHz
Base Number Matches
1
文档预览
2SC2396, 2SC2543, 2SC2544
Silicon NPN Epitaxial
Application
Low frequency amplifier
Complementary pair with 2SA1025, 2SA1081 and 2SA1082
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC2396, 2SC2543, 2SC2544
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
Tstg
2SC2396
60
60
5
100
–100
400
150
–55 to +150
2SC2543
90
90
5
100
–100
400
150
–55 to +150
2SC2544
120
120
5
100
–100
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SC2396
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol Min
V
(BR)CBO
60
V
(BR)CEO
60
V
(BR)EBO
5
I
CBO
I
EBO
250
Typ
0.6
90
3.0
Max
0.1
0.1
2SC2543
Min
90
90
5
Typ Max
0.6
90
3.0
0.1
0.1
1200
0.2
2SC2544
Min
120
120
5
250
Typ Max
0.6
90
3.0
0.1
0.1
800
0.2
V
V
Unit Test conditions
V
V
V
µA
µA
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA,
R
BE
=
I
E
= 10
µA,
I
C
= 0
V
CB
= 50 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V,
I
C
= 2 mA
I
C
= 10 mA,
I
B
= 1 mA
V
CE
= 12 V,
I
C
= 2 mA
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
Base to emitter voltage
V
CE(sat)
V
BE
1200 250
0.2
Gain bandwidth product f
T
Collector output
capacitance
Cob
MHz V
CE
= 12 V,
I
C
= 2 mA
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by h
FE1
as follows.
D
E
400 to 800
400 to 800
F
600 to 1200
250 to 500
250 to 500
2SC2396, 2SC2543
2SC2544
See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.
2
2SC2396, 2SC2543, 2SC2544
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
600
400
200
0
50
100
Ambient Temperature Ta (°C)
150
3
Unit: mm
4.8
±
0.3
3.8
±
0.3
2.3 Max
0.5
±
0.1
0.7
0.60 Max
12.7 Min
5.0
±
0.2
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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参数对比
与2SC2544相近的元器件有:2SC2396、2SC2543。描述及对比如下:
型号 2SC2544 2SC2396 2SC2543
描述 Silicon NPN Epitaxial Silicon NPN Epitaxial Silicon NPN Epitaxial
是否Rohs认证 不符合 不符合 不符合
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow unknow unknown
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A
配置 Single Single Single
最小直流电流增益 (hFE) 250 250 250
JEDEC-95代码 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609代码 e0 e0 e0
端子数量 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL
极性/信道类型 NPN NPN NPN
最大功率耗散 (Abs) 0.4 W 0.4 W 0.4 W
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM
标称过渡频率 (fT) 90 MHz 90 MHz 90 MHz
Base Number Matches 1 1 -
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