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2SC3040N

8A, 400V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
零件包装代码
TO-218
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
2
Reach Compliance Code
unknow
其他特性
HIGH RELIABILITY
最大集电极电流 (IC)
8 A
集电极-发射极最大电压
400 V
配置
SINGLE
最小直流电流增益 (hFE)
30
JEDEC-95代码
TO-218
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
最高工作温度
140 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
功耗环境最大值
80 W
最大功率耗散 (Abs)
2.5 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
20 MHz
Base Number Matches
1
文档预览
Ordering number:EN997B
NPN Triple Diffused Planar Silicon Transistor
2SC3040
400V/8A Switching Regulator Applications
Features
· High breakdown voltage (V
CBO
≥500V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2022A
[2SC3040]
3.5
15.6
14.0
2.6
3.2
4.8
2.0
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.3
1.2
15.0
20.0
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
1.4
Ratings
500
400
7
8
Unit
V
V
V
A
A
A
W
W
PW≤300μs, Duty Cycle≤10%
16
3
2.5
Tc=25˚C
80
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.8A
VCE=5V, IC=4A
15*
8
Conditions
Ratings
min
typ
max
10
10
50*
Unit
µA
µA
Continued on next page.
* : The h
FE
1 of the 2SC3040 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
L
15 to 30
M
20 to 40
N
30 to 50
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51304TN (PC)/N3098HA (KT)/4147KI/3095MW, TS No.997–1/4
2SC3040
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
fT
Cob
IC=4A, IB=0.8A
IC=4A, IB=0.8A
VCE=10V, IC=0.8A
VCB=10V, f=1MHz
500
400
7
400
400
450
1.0
2.5
1.0
20
80
Conditions
Ratings
min
typ
max
1.0
1.5
Unit
V
V
MHz
pF
V
V
V
V
V
V
µs
µs
µs
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=10mA, RBE=∞
V(BR)EBO IE=1mA, IC=0
VCEO(sus) IC=8A, IB=1.6A, L=50µH
VCEX(sus)1
IC=8A, IB1=1.6A, L=200µH, IB2=–1.6A, clamped
VCEX(sus)2
IC=1.5A, IB1=0.3A, L=200µH, IB2=–0.3A, clamped
ton
tstg
tf
IC=5A, IB1=1A, IB2=–1A, RL=40
Ω
, VCC=200V
IC=5A, IB1=1A, IB2=–1A, RL=40
Ω
, VCC=200V
IC=5A, IB1=1A, IB2=–1A, RL=40
Ω
, VCC=200V
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
RB
VR
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=200V
IB1
IB2
OUTPUT
RL
5IB1= --5IB2= IC
5
IC -- VCE
Pulse
180mA
160mA
140mA
A
120m
200mA
10
IC -- VCE
Pulse
2.0A
1.8A
1.4A
1.2A
1.0A 1.6A
800mA
Collector Current, IC – A
3
Collector Current, IC – A
4
8
6
2
100mA
80mA
60mA
40mA
600mA
400mA
4
200mA
1
20mA
2
0
0
IB=0
2
4
6
8
10
ITR05246
0
0
2
4
IB=0
6
8
10
ITR05247
Collector-to-Emitter Voltage, VCE – V
8
7
Collector-to-Emitter Voltage, VCE – V
2
IC -- VBE
VCE=5V
Pulse
hFE -- IC
VCE=5V
Pulse
100
Collector Current, IC – A
DC Current Gain, hFE
6
5
4
3
2
1
7
5
3
2
Ta=120
°C
25
°C
--40
°
C
Ta=
120
°
C
25
°
C
--40
°
C
10
7
5
3
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Base-to-Emitter Voltage, VBE – V
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
ITR05248
Collector Current, IC – A
10
ITR05249
5 7
No.997–2/4
2SC3040
3
2
VCE(sat) -- IC
IC / IB=5
Pulse
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
10
7
5
VBE(sat) -- IC
IC / IB=5
Pulse
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
1.0
7
5
3
2
3
2
1.0
7
5
3
0.01
0.1
7
5
3
0.01
C
20
°
a=1
T
C
25
°
°
C
--40
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
ITR05250
Ta= --40°C
25
°C
120
°
C
2
3
Collector Current, IC – A
5 7 0.1
2
3
Collector Current, IC – A
5 7 1.0
2
3
7 10
ITR05251
5
2
10
7
5
3
2
1.0
7
5
3
2
0.1
5
7
0.1
2
SW Time -- IC
R load
IC=5IB1= --5IB2
VCC=200V
tstg
100
PC -- Ta
Switching Time, SW time –
μs
Collector Dissipation, P
C
– W
80
60
40
tf
20
ton
0
3
5
7
1.0
2
3
5
10
ITR05252
3
2
16
10
7
0
20
40
60
80
100
120
140
160
Collector Current, IC – A
Ambient Temperature, Ta – ˚C
ITR05253
16
3
2
Forward Bias A S O
ICP=16A
<50
μs
DC
op
Di
erati
Limsipa
on
ite tion
d
Reverse Bias A S O
Tc=25°C
L=200μH
IC= --5IB2
T=100ms
Test Circuit
IB1
--IB2
IC
0
μ
10
10
8
Collector Current, IC – A
5
3
2
1.0
5
3
2
0.1
5
3
2
Collector Current, IC – A
IC=8A
7
5
3
2
1.0
7
5
3
IB2= --1.6A
Const
(at IC
≥8A)
s
1m
s
10
ms
ite
d
m
Li
S
/B
TUT
L
100Ω
--5V
VCC=20V
2
3
5
7
100
2
Tc=25°C
Single pulse
5
7
10
2
3
5
7 100
IC
2
3 400 5 7 1000
– V
ITR05254
2
0.1
5
7
10
450
3
5
Collector-to-Emitter Voltage, VCE
Collector-to-Emitter Voltage, VCE – V
7 1000
ITR05255
No.997–3/4
2SC3040
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2004. Specifications and information herein are subject to
change without notice.
PS No.997–4/4
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参数对比
与2SC3040N相近的元器件有:2SC3040L、2SC3040-L、2SC3040-M、2SC3040M、2SC3040-N。描述及对比如下:
型号 2SC3040N 2SC3040L 2SC3040-L 2SC3040-M 2SC3040M 2SC3040-N
描述 8A, 400V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 8A, 400V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 8A, 400V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN 8A, 400V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
零件包装代码 TO-218 TO-218 TO-218 TO-3PB TO-218 TO-3PB
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 2 2 2 3 2 3
Reach Compliance Code unknow unknown unknown unknow unknow unknow
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
最大集电极电流 (IC) 8 A 8 A 8 A 8 A 8 A 8 A
集电极-发射极最大电压 400 V 400 V 400 V 400 V 400 V 400 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 30 15 15 20 20 30
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 140 °C 140 °C 140 °C 140 °C 140 °C 140 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 2.5 W 2.5 W 2.5 W 2.5 W 2.5 W 2.5 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz
JEDEC-95代码 TO-218 TO-218 TO-218 - TO-218 -
功耗环境最大值 80 W 80 W 80 W - 80 W -
Base Number Matches 1 - - 1 1 1
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