High h
FE
L
OW
V
CE
(sat)
Silicon NPN Epitaxial Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol 2SC3852 2SC3852A
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
80
60
6
3
1
25(Tc=25°C)
150
–55 to +150
100
80
Unit
V
V
V
A
A
W
°C
°C
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC3852/3852A
Application :
Driver for Solenoid and Motor, Series Regulator and General Purpose
(Ta=25°C)
2SC3852
2SC3852A
Unit
s
Electrical Characteristics
Symbol
I
CBO
V
CB
=
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=0.5A
I
C
=2A, I
B
=50mA
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
80
100
max
60
min
500
min
0.5
max
15
typ
50
typ
Conditions
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
10
max
100
80
min
µ
A
µ
A
V
V
MHz
pF
2.54
2.2
±0.2
16.9
±0.3
V
8.4
±0.2
13.0min
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(Ω)
20
I
C
(A)
1.0
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
15
I
B2
(mA)
–30
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
3.0typ
t
f
(
µ
s)
1.2typ
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
3
I
B
=1
2m
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l ec to r - Em i t t er S a t ur a t i o n Vo l tag e V
CE( s a t)
(V )
1.0
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= 4 V )
3
A
8m A
C ol l e c t o r C ur r en t I
C
( A)
5mA
2
3mA
2mA
1.0
C ol l e c t o r C ur r e nt I
C
( A)
2
p)
ase
T
em
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
e Te
25˚C
(Cas
1
1mA
0.5mA
0.5
3A
1
125
˚
2A
I
C
=1A
0
0.001
0
0
0
1
2
3
4
5
6
0.005 0.01
0.05
0.1
0.5
1
0
–30˚C
(Case
C (C
mp)
Temp
)
0.5
Ba s e - E m i t t or V o l t a ge V
BE
( V)
1.0 1.1
Col l e ct o r- Em i t t er Vo l ta ge V
C E
(V)
Ba s e Cu r r en t I
B
( A)
(V
C E
= 4 V )
2000
D C C ur r en t Ga i n h
FE
2000
D C C ur r en t Ga i n h
FE
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j-a
( ˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
125˚C
2 5 ˚C
1000
Typ
1000
500
500
–30˚C
1
V
CB
= 10 V
I
E
=– 2 A
1
10
T i m e t( m s )
1 00
1000
100
0.01
0.1
0 .5
1
3
100
0 .0 1
0. 1
0.5
1
3
0.5
Co l l ect o r Cu rre nt I
C
(A)
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
30
(V
C E
=1 2 V )
10
Safe Operating Area
(Single Pulse)
30
1m
Pc – Ta Derating
C ut- off Fr eq u e n c y f
T
( M H
Z
)
10
m
0m
s
Col lec tor Cu r r e n t I
C
(A )
s
M ax im um P o wer Di s s i p a t i o n P
C
( W )
5
10
s
W
20
DC
20
ith
In
Typ
fin
1
0.5
ite
he
at
si
nk
10
10
Without Heatsink
Natural Cooling
0.1
W i t h o ut H e at s i n k
3
5
50
1 00
0
0
–0.005 –0.01
0.05
–0.05 –0.1
–0. 5
–1
–2
10
Emi t t e r Curre nt I
E
(A )
Co l l ec to r - Em i tt er Vo l ta ge V
C E
( V)
0
50
10 0
150
Am b i e n t T e m pe r a t u r e T a( ˚ C)
77
