Ordering number:ENN2851
NPN Triple Diffused Planar Silicon Transistor
2SC4428
800V/6A Switching Regulator Applications
Features
· High breakdown voltage, high reliability.
· Fast switching speed (t
f
: 0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating easy mounting.
Package Dimensions
unit:mm
2039D
[2SC4428]
3.4
16.0
5.6
3.1
5.0
8.0
21.0
22.0
20.4
2.8
2.0
1.0
4.0
2.0
0.6
1
2
3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25˚C
PW≤300µs, duty cycle≤10%
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Conditions
3.5
Ratings
1100
800
7
6
20
3
3
55
150
–55 to +150
2.0
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
VCB=800V, IE=0
VEB=5V, IC=0
Conditions
Ratings
min
typ
max
10
10
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13004TN (KT)/D1898HA (KT)/N248MO, TS No.2851–1/4
2SC4428
Continued from preceding page.
Parameter
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCE=5V, IC=0.4A
VCE=5V, IC=2A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
VCE=10V, IC=0.4A
1100
800
7
800
0.5
3.0
0.3
15
120
Conditions
Ratings
min
10
8
2.0
1.5
V
V
MHz
pF
V
V
V
V
µs
µs
µs
typ
max
40
Unit
VCB=10V, f=1MHz
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=5mA, RBE=∞
V(BR)EBO IE=1mA, IC=0
VCEX(sus) IC=3A, IB1=0.6A, IB2=–0.6A, L=1mH, Clamped
ton
IC=4A, IB1=0.8A, IB2=–1.6A, RL=100
Ω,
VCC=400V
tstg
tf
IC=4A, IB1=0.8A, IB2=–1.6A, RL=100
Ω,
VCC=400V
IC=4A, IB1=0.8A, IB2=–1.6A, RL=100
Ω,
VCC=400V
* : The h
FE
1 of the 2SC4428 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
K
10 to 20
L
15 to 30
M
20 to 40
Switching Time Test Circuit
INPUT
PW=20µs
D.C.≤1%
50Ω
IB1
IB2
RB
VR
+
100µF
VBE= --5V
+
470µF
VCC=400V
OUTPUT
RL
7
IC -- VCE
7
IC -- VBE
VCE=5V
6
6
Collector Current, IC – A
5
4
25
°
C
0.8
200mA
2
150mA
100mA
2
1
50mA
1
0
IB=0
0
0
1
2
3
4
5
6
7
20mA
8
9
10
0
0.2
0.4
0.6
1.0
1.2
ITR06863
Collector-to-Emitter Voltage, VCE – V
2
ITR06862
10
Base-to-Emitter Voltage, VBE – V
hFE -- IC
VCE=5V
VCE(sat) -- IC
120
°
C
5 7 0.1
2
3
5 7 1.0
2
7
5
IC / IB=5
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
100
7
DC Current Gain, hFE
5
Ta=120°C
3
2
1.0
7
5
3
2
0.1
7
5
3
0.01
2
3
25
°C
10
7
5
3
0.01
--40
°
C
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC – A
7 10
ITR06864
5
Ta=
--4
0
°
C
3
2
Collector Current, IC – A
5 7 10
ITR06865
No.2851–2/4
25
°
C
3
Ta=
1
3
3
--40
°
C
800mA
700mA
600mA
500mA
400mA
300mA
Collector Current, IC – A
5
4
20
°
C
2SC4428
10
7
VBE(sat) -- IC
IC / IB=5
Switching Time, SW Time –
µs
7
5
3
2
SW Time -- IC
ts
tg
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
1.0
7
5
3
2
1.0
7
5
3
2
0.01
2
3
5
Ta= --40°C
25
°C
120
°
C
0.1
7
5
0.1
Collector Current, IC – A
7 0.1
2
3
5
7 1.0
2
3
7 10
ITR06866
5
2
3
5
7
Collector Current, IC – A
1.0
2
3
to
n
tf
5
10
ITR06867
7
3
2
Forward Bias A S O
ICP=20A
s
0
µ
10
5
3
2
Reverse Bias A S O
Tc=25°C
IB2= --0.6A
L=200µH
Collector Current, IC – A
Collector Current, IC – A
10
5
3
2
1.0
5
3
2
0.1
5
3
2
3
IC=6A
P
DC
C = 5 5
ope
W
rat
ion
1m
s
10
5
3
2
Test Circuit
IB1
IB2
5
3
2
VR
TUT
L
IC
ms
10
1.0
Single pulse
Tc=25°C
5
7
0.1
5
2
3
5
7 100
2
3
7 1000
ITR06868
70
5
5
7
--5V
100
2
VCC=20V
3
5
7
1000
2
ITR06869
Collector-to-Emitter Voltage, VCE – V
3.5
10
Collector-to-Emitter Voltage, VCE – V
PC -- Ta
PC -- Ta
3.0
60
Collector Dissipation, P
C
– W
2.5
Collector Dissipation, P
C
– W
50
2.0
No
40
he
at
1.5
sin
k
30
1.0
20
0.5
0
0
20
40
60
80
100
120
140
160
10
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
Transient Thermal Resistance, Rth(t) –
°C/W
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.1
2 3
5
1.0
2 3
5
10
2 3
5
100
ITR06870
Ambient Temperature, Ta – ˚C
ITR06871
Rth(t) -- t
Tc=25°C
2 3
Time, t – ms
5 1000
ITR06872
No.2851–3/4
2SC4428
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2004. Specifications and information herein are subject
to change without notice.
PS No.2851–4/4
