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2SC4617EB-R

150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, EMT3F, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:ROHM(罗姆半导体)

厂商官网:https://www.rohm.com/

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器件参数
参数名称
属性值
零件包装代码
SC-89
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknow
最大集电极电流 (IC)
0.15 A
集电极-发射极最大电压
50 V
配置
SINGLE
最小直流电流增益 (hFE)
180
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
180 MHz
Base Number Matches
1
文档预览
General purpose small signal amplifier (50V, 0.15A)
2SC4617EB
Features
1) Excellent h
FE
linearity.
2) Complements the 2SA1774EB.
Structure
NPN silicon epitaxial
planar transistor
Dimensions
(Unit : mm)
EMT3F
1.6
0.26
1.6
0.86 0.37
0.7
0.45
(3)
(1)
0.5 0.5
1.0
(2)
0.13
(1) Base
(2) Emitter
(3) Collector
∗ =
Denotes h
FE
Each lead has same dimensions
Abbreviated symbol : B
Absolute
maximum
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=1ms Single pulse
∗2
Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
∗1
∗2
Limits
60
50
7
150
200
150
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Electrical
characteristics
(Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
50
60
7
120
Typ.
180
2
Max.
100
100
400
390
3.5
Unit
V
V
V
nA
nA
mV
MHz
pF
I
C
=1mA
I
C
=50μA
I
E
=50μA
V
CB
=60V
V
EB
=7V
I
C
/I
B
=50mA/5mA
V
CE
=6V, I
C
=1mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CE
=12V, I
E
=0A, f=1MHz
Conditions
h
FE
rank categories
Rank
h
FE
Q
120 to 270
R
180 to 390
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.C
0.45
0.37
2SC4617EB
Electrical
characteristic curves
50
100
Data Sheet
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
V
CE
=6V
80
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
20
10
5
Ta=100°C
25
°C
−5
5°C
0.50mA
mA
0.45
A
0m
0.4
0.35mA
0.30mA
10
Ta=25°C
30μA
27μA
8
24μA
21μA
60
0.25mA
0.20mA
6
18μA
15μA
2
1
0.5
0.2
0.1
0
40
0.15mA
0.10mA
4
12μA
9μA
20
0.05mA
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
2
6μA
3μA
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0
4
8
I
B
=0A
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics (
Ι
)
Fig.3
Grounded emitter output
characteristics (
ΙΙ
)
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Ta=25°C
500
Ta=100°C
V
CE
=5V
3V
1V
DC CURRENT GAIN : h
FE
V
CE
=5V
0.5
Ta=25°C
DC CURRENT GAIN : h
FE
200
200
25°C
−55°C
0.2
I
C
/I
B
=50
20
10
100
100
0.1
0.05
50
50
0.02
20
10
0.2
20
10
0.2
0.5 1
2
5
10 20
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.5
I
C
/I
B
=10
0.5
I
C
/I
B
=50
TRANSITION FREQUENCY : f
T
(MHz)
500
Ta=25°C
V
CE
=6V
0.2
Ta=100°C
25°C
−55°C
0.2
0.1
0.05
Ta=100°C
25°C
−55°C
0.1
0.05
200
0.02
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100
100
0.01
0.2
0.5 1
2
5
10
20
50 100 200
50
−0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
Ι
)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
Fig.9 Gain bandwidth product vs.
emitter current
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.12 - Rev.C
2SC4617EB
BASE COLLECTOR TIME CONSTANT : Cc·r
bb'
(ps)
Data Sheet
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
20
10
Cib
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
200
Ta=25°C
f=32MH
Z
V
CB
=6V
100
5
50
2
Co
20
b
1
0.2
0.5
1
2
5
10
20
50
10
−0.2
−0.5
−1
−2
−5
−10
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Fig.11 Base-collector time constant
vs. emitter current
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
3/3
2009.12 - Rev.C
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
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参数对比
与2SC4617EB-R相近的元器件有:2SC4617EB-Q。描述及对比如下:
型号 2SC4617EB-R 2SC4617EB-Q
描述 150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, EMT3F, 3 PIN 150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, EMT3F, 3 PIN
零件包装代码 SC-89 SC-89
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3
Reach Compliance Code unknow unknow
最大集电极电流 (IC) 0.15 A 0.15 A
集电极-发射极最大电压 50 V 50 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 180 120
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 180 MHz 180 MHz
Base Number Matches 1 1
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