2SC4939TLF,2SC4939TLF pdf中文资料,2SC4939TLF引脚图,2SC4939TLF电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

包装说明

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code

unknow

ECCN代码

EAR99

最大集电极电流 (IC)

12 A

集电极-发射极最大电压

60 V

配置

SINGLE

最小直流电流增益 (hFE)

160

JESD-30 代码

R-PSSO-G2

元件数量

端子数量

最高工作温度

150 °C

封装主体材料

PLASTIC/EPOXY

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE

极性/信道类型

NPN

功耗环境最大值

35 W

认证状态

Not Qualified

表面贴装

YES

端子形式

GULL WING

端子位置

SINGLE

晶体管应用

SWITCHING

晶体管元件材料

SILICON

标称过渡频率 (fT)

120 MHz

最大关闭时间（toff）

1800 ns

最大开启时间（吨）

300 ns

VCEsat-Max

0.5 V

Base Number Matches

参数对比

与2SC4939TLF相近的元器件有：2SC4939TLE、2SC4939TLEF、2SC4939TL/EF、2SC4939TL/E、2SC4939TL/F、2SC4939TLDE、2SC4939TLD、2SC4939TL/DE、2SC4939TL/D。描述及对比如下：

型号	2SC4939TLF	2SC4939TLE	2SC4939TLEF	2SC4939TL/EF	2SC4939TL/E	2SC4939TL/F	2SC4939TLDE	2SC4939TLD	2SC4939TL/DE	2SC4939TL/D
描述	Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin	Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin	Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin	12A, 60V, NPN, Si, POWER TRANSISTOR	12A, 60V, NPN, Si, POWER TRANSISTOR	12A, 60V, NPN, Si, POWER TRANSISTOR	Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin	Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin	12A, 60V, NPN, Si, POWER TRANSISTOR	12A, 60V, NPN, Si, POWER TRANSISTOR
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
最大集电极电流 (IC)	12 A	12 A	12 A	12 A	12 A	12 A	12 A	12 A	12 A	12 A
集电极-发射极最大电压	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	160	100	100	100	100	160	60	60	60	60
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
功耗环境最大值	35 W	35 W	35 W	35 W	35 W	35 W	35 W	35 W	35 W	35 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz
最大关闭时间（toff）	1800 ns	1800 ns	1800 ns	1800 ns	1800 ns	1800 ns	1800 ns	1800 ns	1800 ns	1800 ns
最大开启时间（吨）	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns
VCEsat-Max	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V
Base Number Matches	1	1	1	1	1	1	1	1	1	-