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2SC5615-T3FB-A

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3

器件类别：分立半导体    晶体管   

厂商名称：NEC(日电)

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
NEC(日电)
包装说明
SMALL OUTLINE, R-PDSO-F3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW NOISE
最大集电极电流 (IC)
0.065 A
基于收集器的最大容量
0.9 pF
集电极-发射极最大电压
10 V
配置
SINGLE
最高频带
ULTRA HIGH FREQUENCY BAND
JESD-30 代码
R-PDSO-F3
JESD-609代码
e6
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN BISMUTH
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管元件材料
SILICON
标称过渡频率 (fT)
7000 MHz
Base Number Matches
1
文档预览
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5615
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• 1005 package employed (1.0
×
0.5
×
0.5 mm)
• NF = 1.4 dB TYP.,
S
21e
2
= 12.0 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
2SC5615
2SC5615-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
10
1.5
65
140
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10081EJ01V0DS (1st edition)
(Previous No. P15572EJ1V0DS00)
Date Published January 2002 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Corporation 2001
©
NEC Compound Semiconductor Devices 2002
2SC5615
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
2
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 7 mA
–
–
80
–
–
–
800
800
145
nA
nA
–
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz,
Z
S
= Z
opt
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
4.5
10.0
–
–
7.0
12.0
1.4
–
–
–
2.7
0.9
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
EB
D1
80 to 110
FB
D2
100 to 145
2
Data Sheet PU10081EJ01V0DS
2SC5615
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.6
0.5
0.4
0.3
0.2
0.1
f = 1 MHz
300
Total Power Dissipation P
tot
(mW)
250
200
150
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
140
100
50
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
V
CE
= 1 V
60
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
V
CE
= 2 V
60
Collector Current I
C
(mA)
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
V
CE
= 3 V
60
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
25
20
15
10
5
I
B
= 30
µ
A
90
µ
A
300
µ
A
210
µ
A
I
B
: 30
µ
A step
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
150
µ
A
0
2
4
6
8
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
Data Sheet PU10081EJ01V0DS
3
2SC5615
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
V
CE
= 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
100
DC Current Gain h
FE
1
10
100
100
10
0.1
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 3 V
DC Current Gain h
FE
100
10
0.1
1
10
100
Collector Current I
C
(mA)
4
Data Sheet PU10081EJ01V0DS
2SC5615
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product f
T
(GHz)
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
V
CE
= 2 V
f = 1 GHz
8
V
CE
= 1 V
f = 1 GHz
8
6
6
4
4
2
2
0
1
10
Collector Current I
C
(mA)
100
0
1
10
Collector Current I
C
(mA)
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
f = 1 GHz
8
6
4
2
0
1
10
Collector Current I
C
(mA)
100
Data Sheet PU10081EJ01V0DS
5
查看更多>
参数对比
与2SC5615-T3FB-A相近的元器件有：2SC5615-EB-A、2SC5615-FB-A、2SC5615-T3EB、2SC5615-T3EB-A。描述及对比如下：
型号 2SC5615-T3FB-A 2SC5615-EB-A 2SC5615-FB-A 2SC5615-T3EB 2SC5615-T3EB-A
描述 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3
是否Rohs认证 符合 符合 符合 不符合 符合
厂商名称 NEC(日电) NEC(日电) NEC(日电) NEC(日电) NEC(日电)
包装说明 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
针数 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
最大集电极电流 (IC) 0.065 A 0.065 A 0.065 A 0.065 A 0.065 A
基于收集器的最大容量 0.9 pF 0.9 pF 0.9 pF 0.9 pF 0.9 pF
集电极-发射极最大电压 10 V 10 V 10 V 10 V 10 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
最高频带 ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 代码 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
JESD-609代码 e6 e6 e6 e0 e6
元件数量 1 1 1 1 1
端子数量 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES
端子面层 TIN BISMUTH TIN BISMUTH TIN BISMUTH TIN LEAD TIN BISMUTH
端子形式 FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 7000 MHz 7000 MHz 7000 MHz 7000 MHz 7000 MHz
Base Number Matches 1 1 1 1 1
是否无铅 不含铅 不含铅 不含铅 - 不含铅
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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