2SC5862
Silicon NPN Epitaxial
ADE-208-1482 (Z)
Rev.0
Feb. 2002
Features
•
Low frequency amplifier
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5862
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
Tj
Tstg
Ratings
50
40
5
100
–100
130
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Grade
Mark
h
FE
B
LB
100 to 200
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
Min
50
40
5
100
Typ
D
Max
0.5
0.5
500
0.2
0.75
Unit
V
V
V
µA
µA
V
V
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 12 V, I
C
= 2 mA
V
CE(sat)
V
BE
C
Notes: 1. The 2SC5862 is grouped by h
FE
as follows.
LC
160 to 320
LD
250 to 500
Rev.0, Feb. 2002, page 2 of 6
2SC5862
Maximum Collector Dissipation Curve
Typical Output Characteristics
10
60
P
C
* (mW)
150
I
C
(mA)
8
50
40
Collector Power Dissipation
100
6
Collector Current
30
4
20
2
Pulse test
10
µA
I
B
= 0
20
25
V
CE
(V)
50
* Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
0
50
100
Ta (°C)
150
0
Ambient Temperature
5
10
15
Collector to Emitter Voltage
Typical Transfer Characteristics
5
300
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 12 V
Pulse test
(mA)
4
DC Current Transfer Ratio
h
FE
V
CE
= 12 V
I
C
200
3
°
C
= 75
Ta
25
Collector Current
2
100
1
0
0.2
0.4
0.6
Base to Emitter Voltage
0.8
V
BE
(V)
1.0
0
0.03
0.1 0.3
1.0
Collector Current
10
I
C
(mA)
3
30
Rev.0, Feb. 2002, page 3 of 6
2SC5862
Base to Emitter Voltage vs.
Ambient Temperature
Collector Output Capacitance vs.
Collector to Base Voltage
C
ob
(pF)
0.9
5
I
E
= 0
f = 1 MHz
4
V
BE
(V)
V
CE
= 12
I
C
= 2 mA
0.8
0.7
Collector Output Capacitance
Base to Emitter Voltage
3
0.6
0.5
0.4
–20
2
1
0
20
40
60
Ta (°C)
80
0
Ambient Temperature
4
8
12
Collector to Base Voltage
16
20
V
CB
(V)
Emitter Input Capacitance vs.
Emitter to Base Voltage
Cib (pF)
5
I
C
= 0
f = 1 MHz
4
Emitter Input Capacitance
3
2
1
0
2
4
6
8
V
EB
(V)
10
Emitter to Base Voltage
Rev.0, Feb. 2002, page 4 of 6
2SC5862
Package Dimensions
As of July, 2001
Unit: mm
1.6
±
0.2
0.3
–0.05
+0.1
0.15
–0.05
+0.1
0.4
0.8
±
0.1
0.4
1.6
±
0.2
0
−
0.1
0.2
–0.05
0.5 0.5
1.0
±
0.1
+0.1
0.2
–0.05
+0.1
0.7
±
0.1
0.15
Hitachi Code
JEDEC
JEITA
Mass (reference value)
SMPAK
Conforms
0.003 g
Rev.0, Feb. 2002, page 5 of 6
嵌入式系统
