Power Transistors
2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
8.5
±0.2
Unit: mm
3.4
±0.3
1.0
±0.1
6.0
±0.2
10.0
±0.3
1.5
±0.1
■
Features
•
Wide safe operation area
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
4.4
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
80
80
8
4
6
1
30
1.3
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
A
W
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
*1
Conditions
V
CB
=
20
V, I
E
= 0
V
EB
= 8 V, I
C
= 0
Min
Typ
Max
30
1
(7.6)
Unit
µA
mA
V
2
Collector-emitter sustaining voltage
*
V
CEO(SUS)
I
C
=
0.2 A, L
=
25 mH
80
40
30
160
1.2
1.0
1
Forward current transfer ratio
V
CE
= 3
V, I
C
= 0.1
A
V
CE
= 3
V, I
C
= 1
A
V
CE
=
3
V, I
C
=
1
A
I
C
= 2
A, I
B
= 0.4
A
V
CE
=
10 V, I
C
= 0.2
A, f
=
0.5 MHz
V
BE
V
CE(sat)
f
T
V
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
Rank
h
FE2
Q
30 to 60
P
50 to 100
O
80 to 160
*2: V
CEO(SUS)
test circuit
50 Hz/60 Hz
mercury relay
L
120
Ω
6V
1
Ω
15 V
X
Y
G
(1.5)
1
2
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
2.0
±0.5
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
Publication date: February 2003
SJD00168CED
1
2SB1251
P
C
T
a
50
2.4
(1)T
C
=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
(1)
T
C
=25˚C
I
C
V
CE
3.2
2.8
I
C
V
BE
25˚C
T
C
=100˚C
–25˚C
V
CE
=3V
Collector power dissipation P
C
(W)
40
2.0
I
B
=35mA
Collector current I
C
(A)
1.6
25mA
20mA
15mA
Collector current I
C
(A)
30mA
2.4
2.0
1.6
1.2
0.8
0.4
0
30
1.2
10mA
20
0.8
5mA
10
(2)
(3)
0.4
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
4
I
C
/I
B
=5
T
C
=25˚C
h
FE
I
C
V
CE
=3V
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
4
I
E
=0
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
10
10
3
T
C
=100˚C
25˚C
–25˚C
10
3
1
T
C
=100˚C
25˚C
–25˚C
10
2
10
2
0.1
10
10
0.01
0.01
0.1
1
1
0.01
0.1
1
10
1
0.1
1
10
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector-base voltage V
CB
(V)
Safe operation area
100
Non repetitive pulse
T
C
=25˚C
R
th
t
10
3
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
(1)
(2)
Collector current I
C
(A)
10
I
CP
I
C
t=5ms
t=10ms
t=300ms
Thermal resistance R
th
(°C/W)
10
2
10
1
1
0.1
10
−1
0.01
1
10
100
1000
10
−2
10
−4
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
SJD00168CED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
FPGA/CPLD
