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2SD1857-R-T9N-B

Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：UNISONIC TECHNOLOGIES CO.,LTD

厂商官网：http://www.unisonic.com.tw/

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参数 预览 参数对比
器件参数
参数名称
属性值
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-W3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
最大集电极电流 (IC)
2 A
集电极-发射极最大电压
120 V
配置
SINGLE
最小直流电流增益 (hFE)
180
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-W3
JESD-609代码
e0
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
NPN
表面贴装
NO
端子面层
TIN LEAD
端子形式
WIRE
端子位置
BOTTOM
晶体管元件材料
SILICON
标称过渡频率 (fT)
80 MHz
Base Number Matches
1
文档预览
UNISONIC TECHNOLOGIES CO., LTD
2SD1857
POWER TRANSISTOR
FEATURES
* High breakdown voltage.(BV
CEO
=120V)
* Low collector output capacitance.(Typ.20pF at V
CB
=10V)
* High transition frequency.(f
T
=80MHz)
NPN SILICON TRANSISTOR
1
TO-92
1
TO-92NL
*Pb-free plating product number: 2SD1857L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD1857-x-T92-B
2SD1857L-x-T92-B
2SD1857-x-T92-K
2SD1857L-x-T92-K
2SD1857-x-T9N-B
2SD1857L-x-T9N-B
2SD1857-x-T9N-K
2SD1857L-x-T9N-K
2SD1857-x-T9N-R
2SD1857L-x-T9N-R
Package
TO-92
TO-92
TO-92NL
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Reel
2SD1857L-x-T92-B
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) T92: TO-92, T9N: TO-92NL
(3) x: refer to Classification of h
FE
(4) L: Lead Free Plating, Blank: Pb/Sn
12www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 2
QW-R201-057,C
2SD1857
ABSOLUTE MAXIMUM RATING
(Ta=25
℃
)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
I
CP
NPN SILICON TRANSISTOR
RATINGS
120
120
5
1
2
3
UNIT
V
V
V
W
A
A
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50µA
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=1mA
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50µA
Collector Cut-off Current
I
CBO
V
CB
=100V
Emitter Cut-off Current
I
EBO
V
EB
=4V
DC Current Transfer Ratio
h
FE
V
CE
=5V, I
C
=0.1A
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=/I
B
=1A/0.1A(Note)
Transition Frequency
f
T
V
CE
=5V, I
E
= -0.1A, f=30MHz.
Output Capacitance
C
ob
V
CB
=10V, I
E
=0A, f=1MHz(Note)
Note
:
Measured using pulse current.
MIN
120
120
5
TYP
MAX
UNIT
V
V
V
µA
µA
V
MHz
pF
82
80
20
1
1
390
0.4
CLASSIFICATION OF h
FE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 2
QW-R201-057,C
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参数对比
与2SD1857-R-T9N-B相近的元器件有：2SD1857-P-T9N-B、2SD1857-R-T92-B、2SD1857-Q-T92-B、2SD1857-Q-T9N-B、2SD1857-P-T92-B。描述及对比如下：
型号 2SD1857-R-T9N-B 2SD1857-P-T9N-B 2SD1857-R-T92-B 2SD1857-Q-T92-B 2SD1857-Q-T9N-B 2SD1857-P-T92-B
描述 Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
零件包装代码 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
包装说明 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
针数 3 3 3 3 3 3
Reach Compliance Code unknow compli unknow compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 2 A 2 A 2 A 2 A 2 A 2 A
集电极-发射极最大电压 120 V 120 V 120 V 120 V 120 V 120 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 180 82 180 120 120 82
JEDEC-95代码 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
JESD-609代码 e0 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
极性/信道类型 NPN NPN NPN NPN NPN NPN
表面贴装 NO NO NO NO NO NO
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1 1 1 1
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器件捷径:
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