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2SD2561O

Power Bipolar Transistor, 17A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT200, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：Allegro

厂商官网：http://www.allegromicro.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
17 A
集电极-发射极最大电压
150 V
配置
DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
5000
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
70 MHz
Base Number Matches
1
文档预览
Equivalent circuit
C
Darlington
2SD2561
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=150V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=10mA
I
C
=10A, I
B
=10mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
2SD2561
100
max
100
max
150
min
5000
min
∗
2.5
max
3.0
max
70
typ
120
typ
V
V
MHz
pF
20.0min
4.0max
2
3
B
( 7 0
Ω)
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1648)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2561
150
150
5
17
1
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
µ
A
µ
A
V
a
b
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
10
I
B2
(mA)
–10
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
4.0typ
t
f
(
µ
s)
1.2typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l ta g e V
C E (s a t)
( V)
17
50mA
V
CE
( sat ) – I
B
Characteristics
(Typical)
3
I
C
– V
B E
Temperature Characteristics
(Typical)
17
15
( V
CE
=4 V )
10mA
2m
3m
A
1 .5 m A
15
A
1 .0 m A
C o l l e c t or C u r r e n t I
C
( A)
0 .8 m A
2
10
C o l l ec to r C u r r e n t I
C
( A)
10
mp)
e Te
(Cas
25˚C
p)
I
C
= .1 5A
I
C
= .1 0A
1
I
C
= . 5A
eT
125
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1
–30˚
C (C
˚C
5
I
B
=0.3mA
5
(Ca
s
ase T
emp)
em
0.5mA
2
2. 6
Col l e ct or - Em it te r V ol tag e V
C E
(V)
Bas e C ur r e nt I
B
( m A)
Ba s e - E m i tt o r V ol t ag e V
B E
( V)
(V
C E
=4 V )
50000
DC C ur r en t Ga i n h
FE
D C C u r r e nt Ga i n h
FE
50000
12
5˚C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
Typ
10000
5000
1
10000
5000
25
˚C
0 .5
–30
˚C
1000
500
02
0.5
1
C ol l e ct o r Cur ren t I
C
(A )
5
10
17
1000
500
02
0 .5
1
C ol l ec t or C ur r en t I
C
( A)
5
10
17
0 .1
1
10
1 00
Time t(ms)
1 0 0 0 20 0 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
80
Safe Operating Area
(Single Pulse)
200
Pc – Ta Derating
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
160
W
ith
C ut- off Fr e qu e n c y f
T
(M H
Z
)
60
In
fin
120
ite
he
40
at
si
nk
80
20
40
Without Heatsink
0
25
50
75
100
12 5
1 50
0
–0.02
– 0. 1
–1
Em i t t er Curre nt I
E
(A)
–10
5
0
A m b i e n t T em p e r a tu r e T a ( ˚ C )
159
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参数对比
与2SD2561O相近的元器件有：2SD2561Y、2SD2561P。描述及对比如下：
型号 2SD2561O 2SD2561Y 2SD2561P
描述 Power Bipolar Transistor, 17A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT200, 3 PIN Power Bipolar Transistor, 17A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT200, 3 PIN Power Bipolar Transistor, 17A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT200, 3 PIN
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
最大集电极电流 (IC) 17 A 17 A 17 A
集电极-发射极最大电压 150 V 150 V 150 V
配置 DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 5000 15000 6500
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1
端子数量 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 70 MHz 70 MHz 70 MHz
Base Number Matches 1 1 1
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器件捷径:
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