TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal
厂商名称:Toshiba(东芝)
厂商官网:http://toshiba-semicon-storage.com/
下载文档型号 | 2SK209YTE85R | 2SK209YTE85L | 2SK209LTE85R | 2SK209LTE85L | 2SK209TE85L | 2SK209TE85R | 2SK209GTE85L | 2SK209GTE85R |
---|---|---|---|---|---|---|---|---|
描述 | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
FET 技术 | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
JEDEC-95代码 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |