To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2158
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2158 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2158 is suitable for use in low-voltage
portable systems such as headphone stereo sets and camcorders.
PACKAGE DIMENSIONS
(in millimeters)
0.4
–0.05
2.8
±
0.2
1.5
+0.1
+0.1
0.65
–0.15
2.9
±
0.2
FEATURES
• Capable of drive gate with 1.5 V
• Because of high input impedance, there is no need to
consider driving current.
• Bias resistance can be omitted, enabling reduction in total
number of parts.
0.95 0.95
2
+0.1
+0.1
1
0.3
Marking
1.1 to 1.4
0 to 0.1
0.16
–0.06
Marking: G23
PIN CONNECTION
1. Source (S)
2. Gate (G)
3. Drain (D)
EQUIVALENT CIRCUIT
3
Internal
diode
2
Gate protection
diode
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms,
Duty Cycle
≤
50 %
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATINGS
50
±7.0
±0.1
±0.2
UNIT
V
V
A
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
200
150
–55 to +150
0.4
–0.05
3
mW
˚C
˚C
Document No. D11234EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
2SK2158
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Drain to Source On-state Resistance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 3 V, I
D
= 20 mA
V
GS(on)
= 3 V, R
G
= 10
Ω
R
L
= 150
Ω
TEST CONDITIONS
V
DS
= 50 V, V
GS
= 0
V
GS
=
±7.0
V, V
DS
= 0
V
DS
= 3 V, I
D
= 1.0
µ
A
V
DS
= 3 V, I
D
= 10 mA
V
GS
= 1.5 V, I
D
= 1.0 mA
V
GS
= 2.5 V, I
D
= 10 mA
V
GS
= 4.0 V, I
D
= 10 mA
V
DS
= 3 V, V
GS
= 0
f = 1.0 MHz
0.5
20
32
16
12
6
8
1
9
48
21
31
50
20
15
0.7
MIN.
TYP.
MAX.
1.0
±3.0
1.1
UNIT
µ
A
µ
A
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
2
2SK2158
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
200
V
7
dT - Derating Factor - %
I
D
- Drain Current - mA
5
V
V
0
3.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
160
3.
60
120
2.5 V
40
80
2.0 V
20
40
1.5 V
V
GS
= 1.0 V
0
30
60
90
120
150
0
1
2
3
4
5
T
A
- Ambient Temperature - ˚C
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
TRANSFER CHARACTERISITICS
100
V
DS
= 3 V
I
D
- Drain Current - mA
1 000
V
DS
= 3 V
10
T
A
= 75 ˚C
25 ˚C
–25 ˚C
100
1
T
A
= –25 ˚C
25 ˚C
75 ˚C
0.1
10
0.01
0.001
0
1
V
GS
- Gate to Source Voltage - V
2
1
0.1
1
10
100
1 000
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
70
V
GS
= 1.5 V
2.5
60
50
40
30
20
10
0
1
10
100
1 000
I
D
- Drain Current - mA
T
A
= 75 ˚C
25 ˚C
–25 ˚C
R
DS(on)
- Drain to Source On-state Resistance -
Ω
70
V
GS
= 1.5 V
60
50
40
30
–25 ˚C
20
10
0
0.1
T
A
= 75 ˚C
25 ˚C
1
10
100
I
D
- Drain Current - mA
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
3
嵌入式系统
