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2SK2201(2-7J1B)

TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power

器件类别:分立半导体    晶体管   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
零件包装代码
SC-64
包装说明
LEAD FREE, 2-7J1B, SC-64, 3 PIN
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
雪崩能效等级(Eas)
140 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
100 V
最大漏极电流 (ID)
3 A
最大漏源导通电阻
0.45 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PSSO-G2
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
12 A
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
参数对比
与2SK2201(2-7J1B)相近的元器件有:2SK2201TE16R、2SK2201TE16L、2SK2201LBTE16L、2SK2201STA1、2SK2201LBTE16R。描述及对比如下:
型号 2SK2201(2-7J1B) 2SK2201TE16R 2SK2201TE16L 2SK2201LBTE16L 2SK2201STA1 2SK2201LBTE16R
描述 TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERMOLD, DPAK-3, FET General Purpose Power TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power
包装说明 LEAD FREE, 2-7J1B, SC-64, 3 PIN SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 DPAK-3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 100 V 100 V 100 V 100 V 100 V 100 V
最大漏极电流 (ID) 3 A 3 A 3 A 3 A 3 A 3 A
最大漏源导通电阻 0.45 Ω 0.45 Ω 0.45 Ω 0.35 Ω 0.35 Ω 0.35 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2
元件数量 1 1 1 1 1 1
端子数量 2 2 2 2 3 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES NO YES
端子形式 GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1
针数 3 - - 3 3 3
外壳连接 DRAIN DRAIN DRAIN - DRAIN -
功耗环境最大值 - 20 W 20 W 20 W 20 W 20 W
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