型号
- 型号
- 关键词
Power Field-Effect Transistor, 40A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
厂商名称：NEC(日电)
下载文档| 型号 | 2SK2984-ZJ | 2SK2984-S |
|---|---|---|
| 描述 | Power Field-Effect Transistor, 40A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Power Field-Effect Transistor, 40A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN |
| 厂商名称 | NEC(日电) | NEC(日电) |
| 零件包装代码 | D2PAK | TO-262 |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 |
| 针数 | 4 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| 外壳连接 | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V |
| 最大漏极电流 (ID) | 40 A | 40 A |
| 最大漏源导通电阻 | 0.013 Ω | 0.013 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | TO-262AA |
| JESD-30 代码 | R-PSSO-G2 | R-PSIP-T3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 2 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 160 A | 160 A |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO |
| 端子形式 | GULL WING | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |