2SK3473
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3473
Switching Regulator Applications
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 1.3
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 6.5 S (typ.)
Low leakage current: I
DSS
= 100
μA
(V
DS
= 720 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
900
900
±30
9
27
150
413
9
15
150
-55 to 150
A
W
Unit
V
V
V
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
mJ
A
mJ
°C
°C
―
SC-65
2-16C1B
JEITA
TOSHIBA
Weight: 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
0.833
50
Unit
°C/W
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
9.35 mH, I
AR
=
9 A, R
G
=
25
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2009-09-29
2SK3473
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
∼
400 V, V
GS
=
10 V, I
D
=
9 A
−
Duty
≤
1%, t
w
=
10
μs
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
4.7
Ω
I
D
=
4 A
V
OUT
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±25
V, V
DS
=
0 V
I
D
= ±10 μA,
V
GS
=
0 V
V
DS
=
720 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
4 A
V
DS
=
15 V, I
D
=
4 A
Min
⎯
±30
⎯
900
2.0
⎯
3.0
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
1.3
6.5
1450
30
155
30
55
12
75
38
22
16
Max
±10
⎯
100
⎯
4.0
1.6
⎯
⎯
⎯
pF
Unit
μA
V
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
R
L
=
100
Ω
V
DD
∼
400 V
−
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
9 A, V
GS
=
0 V
I
DR
=
9 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1350
15
Max
9
27
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 4
TOSHIBA
K3473
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
2SK3473
I
D
– V
DS
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
20
10
6
COMMON SOURCE
Tc
=
25°C
PULSE TEST
I
D
– V
DS
8
10
7
6.5
(A)
8
(A)
DRAIN CURRENT I
D
5.5
16
DRAIN CURRENT I
D
6
5.25
5
4.75
12
6
4
8
5.5
2
4.5
VGS
=
4 V
4
5
0
0
4
8
12
16
20
0
0
VGS
=
4.5 V
10
20
30
40
50
DRAIN-SOURCE VOLTAGE
V
DS
(V)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
I
D
– V
GS
V
DS
(V)
20
COMMON SOURCE
VDS
=
50 V
PULSE TEST
20
V
DS
– V
GS
COMMON
SOURCE
Tc
=
25℃
PULSE TEST
(A)
16
16
ID
=
9 A
DRAIN CURRENT I
D
12
DRAIN-SOURCE VOLTAGE
12
8
8
4.5
3
4
4
0
0
2
4
6
8
10
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE
V
GS
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
⎪Y
fs
⎪
– I
D
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪
(S)
10
10
R
DS (ON)
– I
D
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(mΩ)
COMMON SOURCE
Tc
=
25°C
PULSE TEST
Tc
= −55°C
25
1
100
VGS
=
10 V½15V
1
COMMON SOURCE
VDS
=
50 V
0.1
0.1
PULSE TEST
1
10
0.1
0.01
0.1
1
10
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
3
2009-09-29
2SK3473
R
DS (ON)
– Tc
5
10
I
DR
– V
DS
DRAIN REVERSE CURRENT I
DR
(A)
COMMON SOURCE
5
3
Tc
=
25°C
PULSE TEST
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(m
Ω)
COMMON SOURCE
PULSE TEST
4
ID
=
9A
3
4.5
2
3
1
1
0.5
0.3
10
0.1
0
5
1
−0.2
−0.4
−0.6
3
VGS
=
0,
−1
V
−0.8
−1
−1.2
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE
Tc
(°C)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CAPACITANCE – V
DS
10000
5
V
th
– Tc
GATE THRESHOLD VOLTAGE
V
th
(V)
(pF)
Ciss
1000
4
C
3
CAPACITANCE
Coss
100
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
10
0.1
1
3
5
10
Crss
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−80
−40
0
40
80
120
160
30 50
100
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CASE TEMPERATURE
Tc
(°C)
P
D
– Tc
V
DS
(V)
200
600
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
(V)
GATE-SOURCE VOLTAGE
V
GS
12
DRAIN POWER DISSIPATION
P
D
(W)
160
500
VDD
=
100 V
200
300
VGS
COMMON SOURCE
ID
=
9 A
Tc
=
25°C
PULSE TEST
400
10
DRAIN-SOURCE VOLTAGE
400
VDS
8
120
6
80
200
4
40
100
2
0
0
40
80
120
160
200
0
0
10
20
30
0
40
CASE TEMPERATURE
Tc
(°C)
TOTAL GATE CHARGE
Q
g
(nC)
4
2009-09-29
2SK3473
r
th
– t
w
10
Normalized transient thermal impedance
r
th (t)
/R
th (ch-a)
5
3
1
0.5
0.3
0.1
0.05
0.03
Duty
=
0.5
0.2
0.1
0.05
0.02
Single pulse
PDM
0.01
t
T
Duty
=
t/T
Rth (ch-c)
=
0.833°C/W
100
μ
1m
10 m
100 m
1
10
0.01
0.005
0.003
0.001
10
μ
Pulse width
t
w
(S)
Safe operating area
100
50
500
E
AS
– T
ch
Avalanche energy EAS (mJ)
30
ID max (pulsed)
*
100
μs
*
400
10
5
3
ID max (continuous)
DC
1 ms
*
300
(A)
200
Drain current ID
1
0.5
0.3
100
0
25
50
75
100
125
150
0.1
0.05
*
Single nonrepetitive pulse
Tc
=
25°C
with increase in temperature.
0.01
1
VDSS max
3
5
10
30
50
100
300 500 1000
Channel temperature (initial) T
ch
(°C)
0.03 Curves must be derated linearly
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Drain-source voltage
V
DS
(V)
Test circuit
R
G
=
25
Ω
V
DD
=
90 V, L
=
9.35 mH
Wave form
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
5
2009-09-29
PCB设计
