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st
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3993
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK3993 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3993
2SK3993-ZK
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
•
Low on-state resistance
R
DS(on)1
= 3.8 mΩ MAX. (V
GS
= 10 V, I
D
= 32 A)
•
Low C
iss
: C
iss
= 4770 pF TYP.
•
5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
25
±20
±64
±256
40
1.0
150
−55
to +150
41
168
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 12.5 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17322EJ2V0DS00 (2nd edition)
Date Published September 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004
2SK3993
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 25 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 32 A
V
GS
= 5.0 V, I
D
= 16 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 12.5 V, I
D
= 32 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
μ
A
nA
V
S
2.0
15
2.4
3.0
Drain to Source On-state Resistance
2.7
4.1
4770
1000
690
27
38
107
54
3.8
7.8
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 20 V
V
GS
= 10 V
I
D
= 64 A
I
F
= 64 A, V
GS
= 0 V
I
F
= 64 A, V
GS
= 0 V
di/dt = 100 A/
μ
s
88
16
30
0.91
43
52
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
μs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D17322EJ2V0DS
2SK3993
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
P
T
- Total Power Dissipation - W
45
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
100
80
60
40
20
0
T
C
- Case Temperature -
°C
0
25
50
75
100 125
150 175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(DC)
= 64 A
I
D(pulse)
= 256 A
PW = 100
μs
I
D
- Drain Current - A
100
R
DS(on)
Limited
(at V
GS
= 10 V)
Power Dissipation Limited
10
1 ms
10 ms
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 125°C/W
100
10
R
th(ch-C)
= 3.13°C/W
1
0.1
Single pulse
0.01
100
μ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet D17322EJ2V0DS
3
PCB设计
