UNISONIC TECHNOLOGIES CO., LTD
4N80
Preliminary
Power MOSFET
4.0 Amps, 800 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
4N80
is a N-channel mode Power FET. It uses UTC’s
advanced technology to provide costomers planar stripe and DMOS
technology. This technology is specialized in allowing a minimum
on-state resistance, and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
The UTC
4N80
is universally applied in high efficiency switch mode
power supply.
1
TO-220
1
TO-220F
1
TO-220F1
FEATURES
* 4.0A, 800V, R
DS(on)
=3.6Ω @V
GS
=10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N80L-TA3-T
4N80G-TA3-T
4N80L-TF3- T
4N80G-TF3- T
4N80L-TF1- T
4N80G-TF1- T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F
TO-220F1
S: Source
1
G
G
G
Pin Assignment
2
D
D
D
3
S
S
S
Packing
Tube
Tube
Tube
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Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-505.a
4N80
Preliminary
Power MOSFET
UNIT
V
V
A
A
mJ
mJ
V/ns
W
W
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
V
DSS
800
Gate-Source Voltage
V
GSS
±30
Continuous
I
D
4.0
Drain Current
15.6
Pulsed (Note 1)
I
DM
Single Pulsed (Note 2)
E
AS
460
Avalanche Energy
13
Repetitive (Note 1)
E
AR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
TO-220
106
Power Dissipation
P
D
TO-220F/TO-220F1
36
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F/TO-220F1
TO-220
Junction to Case
TO-220F/TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
1.18
3.47
UNIT
°C/W
°C/W
°C/W
°C/W
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QW-R502-505.a
4N80
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
800
0.95
10
100
100
-100
3.0
2
3.8
680
75
8.6
19
4.2
9.1
16
45
35
35
5.0
3.6
TYP
MAX
UNIT
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
V
GS
=0V, I
D
=250µA
I
D
=250μA,
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
Referenced to 25°C
V
DS
=800V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Forward
V
DS
=0V ,V
GS
=30V
Gate-Source Leakage Current
I
GSS
Reverse
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=2A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=640V, V
GS
=10V, I
D
=4A
Gate-Source Charge
Q
GS
(Note 4,5)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=400V, I
D
=4A, R
G
=25Ω
(Note 4,5)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=4A,
dI
F
/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=57mH, I
AS
=4A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
880
100
12
25
40
100
80
80
3.9
15.6
1.4
575
3.65
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QW-R502-505.a
4N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-505.a
UNISONIC TECHNOLOGIES CO., LTD
4N80
Gate Charge Test Circuit
V
GS
Q
G
Preliminary
Power MOSFET
Gate Charge Waveforms
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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QW-R502-505.a
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